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IPD50R280CEAUMA1
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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPD50R280CEAUMA1
Infineon Technologies · MOSFETs · TO-252
IPD50R280CEAUMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin; the datasheet states gate-source voltage limits of -20 V to 20 V static and -30 V to 30 V for AC (f>1 Hz). |
| 2 | Drain | passive | Drain pin; the device is rated for V(BR)DSS of 500 V minimum and continuous drain current ID of 18.1 A at TC=25°C. |
| 3 | Source | passive | Source pin; it is the reference for the gate-source voltage ratings and carries the diode forward current rated at 12.8 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 18.1 | A | TC = 25°C | 3 | ||
| Continuous drain current | ID | 11.4 | A | TC = 100°C | 3 | ||
| Pulsed drain current | ID,pulse | 42.9 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 231 | mJ | ID =5.2A; VDD = 50V | 3 | ||
| Avalanche energy, repetitive | EAR | 0.35 | mJ | ID =5.2A; VDD = 50V | 3 | ||
| Avalanche current, repetitive | IAR | 5.2 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation (non FullPAK) TO-252 | Ptot | 119 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 12.8 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 42.9 | A | TC = 25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs | 3 | ||
| Maximum diode commutation speed | dif/dt | 500 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.05 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | leaded | 3 | ||
| Soldering temperature, wavesoldering | Tsold | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 500 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.35mA | 4 |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=500V,VGS=0V,Tj=25°C | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=500V,VGS=0V,Tj=150°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.25 | 0.28 | Ω | VGS=13V,ID=4.2A,Tj=25°C | 4 | |
| Drain-source on-state resistance | RDS(on) | 0.66 | Ω | VGS=13V,ID=4.2A,Tj=150°C | 4 | ||
| Gate resistance | RG | 3 | Ω | f=1MHz, open drain | 4 |
CAD (KiCad official)
- Symbol:
IPD50R280CEAUMA1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd50r280ceauma1-etched.step/ipd50r280ceauma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd50r280ceauma1.step/ipd50r280ceauma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
3014183b64d18192, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPD50R280CEAUMA1
**Infineon Technologies** · MOSFETs · TO-252
IPD50R280CEAUMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin; the datasheet states gate-source voltage limits of -20 V to 20 V static and -30 V to 30 V for AC (f>1 Hz). |
| 2 | Drain | passive | Drain pin; the device is rated for V(BR)DSS of 500 V minimum and continuous drain current ID of 18.1 A at TC=25°C. |
| 3 | Source | passive | Source pin; it is the reference for the gate-source voltage ratings and carries the diode forward current rated at 12.8 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | 18.1 | A | TC = 25°C | 3 |
| Continuous drain current | ID | | | 11.4 | A | TC = 100°C | 3 |
| Pulsed drain current | ID,pulse | | | 42.9 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 231 | mJ | ID =5.2A; VDD = 50V | 3 |
| Avalanche energy, repetitive | EAR | | | 0.35 | mJ | ID =5.2A; VDD = 50V | 3 |
| Avalanche current, repetitive | IAR | | | 5.2 | A | | 3 |
| MOSFET dv/dt ruggedness | dv/dt | | | 50 | V/ns | VDS=0...400V | 3 |
| Gate source voltage | VGS | -20 | | 20 | V | static | 3 |
| Gate source voltage | VGS | -30 | | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation (non FullPAK) TO-252 | Ptot | | | 119 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -55 | | 150 | °C | | 3 |
| Continuous diode forward current | IS | | | 12.8 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse | | | 42.9 | A | TC = 25°C | 3 |
| Reverse diode dv/dt | dv/dt | | | 15 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs | 3 |
| Maximum diode commutation speed | dif/dt | | | 500 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs | 3 |
| Thermal resistance, junction - case | RthJC | | | 1.05 | °C/W | | 3 |
| Thermal resistance, junction - ambient | RthJA | | | 62 | °C/W | leaded | 3 |
| Soldering temperature, wavesoldering | Tsold | | | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 500 | | | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.35mA | 4 |
| Zero gate voltage drain current | IDSS | | | 10 | µA | VDS=500V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current | IDSS | | 1 | | µA | VDS=500V,VGS=0V,Tj=150°C | 4 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) | | 0.25 | 0.28 | Ω | VGS=13V,ID=4.2A,Tj=25°C | 4 |
| Drain-source on-state resistance | RDS(on) | | 0.66 | | Ω | VGS=13V,ID=4.2A,Tj=150°C | 4 |
| Gate resistance | RG | | 3 | | Ω | f=1MHz, open drain | 4 |
## CAD (KiCad official)
- Symbol: `IPD50R280CEAUMA1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd50r280ceauma1-etched.step` / `ipd50r280ceauma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd50r280ceauma1.step` / `ipd50r280ceauma1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae) (13 pp, sha256 `3014183b64d18192`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipd50r280ceauma1-datasheet.pdf)