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IPD50P03P4L-11

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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD50P03P4L-11

UMW · MOSFETs · TO-252

IPD50P03P4L-11 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE of the P-channel MOSFET; the datasheet gives a gate-source voltage rating of -16 V to 5 V (VGS).
2 D passive DRAIN of the MOSFET; rated for VDS = -30 V with continuous drain current ID = -50 A at TC = 25°C (VGS = -10 V).
3 S passive SOURCE of the MOSFET; the datasheet gives no separate electrical limit for this pin beyond the device ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -30 V VGS=0V, ID=-1mA 2
Gate threshold voltage VGS(th) -1 -1.5 -2 V VDS=VGS, ID=-85µA 2
Gate-source leakage current IGSS -100 nA VGS=-16V, VDS=0V 2
Zero gate voltage drain current at TJ=25°C IDSS -0.02 -1 µA VDS=-24V, VGS=0V, TJ=25°C 2
Zero gate voltage drain current at TJ=125°C IDSS -7 -70 µA VDS=-24V, VGS=0V, TJ=125°C 2
Drain-source on-state resistance (VGS=-4.5V) RDS(ON) 13 18 mΩ VGS=-4.5V, ID=-25A 2
Drain-source on-state resistance (VGS=-10V) RDS(ON) 8.3 10.5 mΩ VGS=-10V, ID=-50A 2
Input capacitance Ciss 2900 3770 pF VGS=0V, VDS=-25V, f=1MHz 2
Output capacitance Coss 835 1090 pF VGS=0V, VDS=-25V, f=1MHz 2
Reverse transfer capacitance Crss 21 42 pF VGS=0V, VDS=-25V, f=1MHz 2
Gate to source charge Qgs 11 14 nC VDD=-24V, ID=-50A, VGS=0 to -10V 2
Gate to drain charge Qgd 5 10 nC VDD=-24V, ID=-50A, VGS=0 to -10V 2
Gate charge total Qg 42 55 nC VDD=-24V, ID=-50A, VGS=0 to -10V 2
Diode continuous forward current IS -50 A TC=25°C 2
Diode pulse current Is,pulse -200 A TC=25°C 2
Diode forward voltage VSD -1 -1.3 V VGS=0V, IF=-50A, TJ=25°C 3
Thermal resistance, junction-case RthJC 2.6 K/W 2
Thermal resistance, junction-ambient (minimal footprint) RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction-ambient (6 cm² cooling area) RthJA 40 K/W SMD version, device on PCB, 6 cm2 cooling area 2
Continuous drain current ID -50 A TC=25°C, VGS=-10V 1
Continuous drain current ID -42 A TC=100°C, VGS=-10V 1
Pulsed drain current ID,pulse -200 A TC=25°C 1
Avalanche energy, single pulse EAS 100 mJ ID=-25A 1
Avalanche current, single pulse IAS -50 A 1
Gate source voltage VGS -16 5 V 1
Power dissipation Ptot 58 W TC=25°C 1
Operating junction and storage temperature TJ,TSTG -55 175 °C 1

CAD (KiCad official)

  • Symbol: IPD50P03P4L-11
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd50p03p4l-11-etched.step / ipd50p03p4l-11-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd50p03p4l-11.step / ipd50p03p4l-11.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 0597735c4b7dff79, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF