component

IPD50P03P4L-11-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipd50p03p4l-11-vbfactory-2.0.0extractor-text

Verified IPD50P03P4L-11-VB

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPD50P03P4L-11-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-e9_dbinf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipd50p03p4l-11-vb.kicad_sym✓ ipd50p03p4l-11-vb.kicad_mod✓ ipd50p03p4l-11-vb.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

IPD50P03P4L-11-VB

VBsemi Elec · MOSFETs · TO-252

IPD50P03P4L-11-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V (absolute maximum).
2 S passive Source terminal; the source-drain diode forward voltage is -1.2 V typical and -1.5 V maximum at IF = -75 A, VGS = 0 V.
3 D passive Drain terminal; drain-source voltage is -30 V (VDS) for this P-channel MOSFET.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -30 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -30 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) -120 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = -10 V, ID = -30 A 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = -10 V, ID = -30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.019 Ω VGS = -10 V, ID = -30 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = -4.5 V, ID = -20 A 2
Forward Transconductance gfs 20 S VDS = -15 V, ID = -75 A 2
Total Gate Charge Qg 160 240 nC VDS = -15 V, VGS = -10 V, ID = -75 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = -15 V, RL = 0.2, ID -75 A, VGEN = -10 V, Rg = 2.5 2
Rise Time tr 225 360 ns 2
Turn-Off Delay Time td(off) 150 240 ns 2
Fall Time tf 210 340 ns 2
Pulsed Current ISM -240 A 2
Forward Voltage VSD -1.2 -1.5 V IF = -75 A, VGS = 0 V 2
Reverse Recovery Time trr 55 100 ns IF = -75 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.5 5 A 2
Reverse Recovery Charge Qrr 0.07 0.25 µC 2
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM -240 A 1
Avalanche Current IAR -50 A 1
Repetitive Avalanche Energy EAR 180 mJ L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Case Thermal Resistance RthJC 0.8 °C/W Junction-to-Case 1

CAD (KiCad official)

  • Symbol: IPD50P03P4L-11-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd50p03p4l-11-vb-etched.step / ipd50p03p4l-11-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd50p03p4l-11-vb.step / ipd50p03p4l-11-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 b16061bb347c1c76, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF