IPD50N04S4L-08-VB

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  "title": "IPD50N04S4L-08-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "IPD50N04S4L-08-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603003006589673472",
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Control terminal of the N-channel MOSFET. VGS(th) = 1.2 V to 2.5 V (ID = 250 µA, VDS = VGS); VGS absolute maximum = ±25 V. Typical gate resistance Rg = 0.85 Ω @ 1 MHz."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. Also electrically connected to the exposed tab of the TO-252 package. VDS absolute maximum = 40 V; continuous ID = 85 A at TC = 25 °C; RDS(on) = 5.0 mΩ typical @ VGS = 10 V, ID = 30 A. Body diode cathode."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. Return terminal for drain current. Body diode anode; continuous source-drain diode current IS = 110 A at TC = 25 °C, VSD ≈ 0.8 V typical at IS = 20 A."
      },
      {
        "number": "4",
        "name": "D",
        "type": "passive",
        "description": "Drain (exposed thermal tab of the TO-252 package). Electrically the same node as pin 2; provides the primary thermal path with RthJC = 0.33 °C/W typical."
      }
    ],
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        "total": 4,
        "described": 4,
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  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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  "updated_at": "2026-09-24T22:48:51.863Z"
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