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IPD50N03S2L06ATMA1

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipd50n03s2l06atma1factory-2.0.0extractor-text

Verified IPD50N03S2L06ATMA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPD50N03S2L06ATMA1 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-jtuzhoda/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipd50n03s2l06atma1.kicad_sym✓ ipd50n03s2l06atma1.kicad_mod✓ ipd50n03s2l06atma1.step
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Ray Publish 0.1.0 c2b9849 8d ago

IPD50N03S2L06ATMA1

Infineon Technologies · MOSFETs · TO-252

IPD50N03S2L06ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate (pin 1) of the N-channel logic-level MOSFET, with maximum gate-source voltage of ±20 V and threshold of 1.2 to 2.0 V.
2 D passive Drain (pin 2, also the tab), rated for 30 V drain-source breakdown and 50 A continuous drain current.
3 S passive Source (pin 3) of the N-channel MOSFET, carrying up to 50 A continuous current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 30 8 V VGS=0 V, ID=1 mA 2
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS, ID=85 µA 2
Zero gate voltage drain current IDSS 0.01 27 µA VDS=30 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current IDSS 1 100 µA VDS=30 V, VGS=0 V, Tj=125 °C 2
Gate-source leakage current IGSS 1 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 7.6 9.2 mΩ VGS=4.5 V, ID=50 A 2
Drain-source on-state resistance RDS(on) 5.1 6.4 mΩ VGS=10 V, ID=50 A 2
Gate to source charge Qgs 6 8 nC VDD=24 V, ID=50 A, VGS=0 to 10 V 3
Gate to drain charge Qgd 16 27 nC VDD=24 V, ID=50 A, VGS=0 to 10 V 3
Gate charge total Qg 50 68 nC VDD=24 V, ID=50 A, VGS=0 to 10 V 3
Diode continuous forward current IS 50 A TC=25 °C 3
Diode pulse current IS,pulse 200 A TC=25 °C 3
Diode forward voltage VSD 0.9 1.3 V VGS=0 V, IF=50 A, Tj=25 °C 3
Thermal resistance, junction - case RthJC 1.1 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 100 K/W 2
Thermal resistance, junction - ambient, SMD RthJA 75 K/W minimal footprint 2
Thermal resistance, junction - ambient, SMD RthJA 50 K/W 6 cm2 cooling area 2
Continuous drain current ID 50 A TC=25 °C, VGS=10 V 1
Pulsed drain current ID,pulse 200 A TC=25 °C 1
Avalanche energy, single pulse EAS 250 mJ ID=50A 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 136 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Drain-source voltage VDS 30 V Product summary 1
Input capacitance Ciss 1900 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 760 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Reverse transfer capacitance Crss 180 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Turn-on delay time td(on) 10 ns VDD=15 V, VGS=10 V, ID=50 A, RG=3.6 Ω 3
Rise time tr 30 ns VDD=15 V, VGS=10 V, ID=50 A, RG=3.6 Ω 3
Turn-off delay time td(off) 40 ns VDD=15 V, VGS=10 V, ID=50 A, RG=3.6 Ω 3
Fall time tf 15 ns VDD=15 V, VGS=10 V, ID=50 A, RG=3.6 Ω 3
Gate plateau voltage Vplateau 3.3 V VDD=24 V, ID=50 A, VGS=0 to 10 V 3
Reverse recovery time trr 40 ns VR=15 V, IF=IS, diF/dt=100 A/µs 3
Reverse recovery charge Qrr 50 nC VR=15 V, IF=IS, diF/dt=100 A/µs 3

CAD (KiCad official)

  • Symbol: IPD50N03S2L06ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd50n03s2l06atma1-etched.step / ipd50n03s2l06atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd50n03s2l06atma1.step / ipd50n03s2l06atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 bfa3e0125935b4a2, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF