# IPD380P06NMATMA1

**Infineon Technologies** · MOSFETs · TO-252

IPD380P06NMATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET; the maximum gate-source voltage is limited to -20 V to 20 V (VGS), and the device is specified at VGS = -10 V for RDS(on). |
| 2 | Drain | passive | Drain of the MOSFET, connected to the tab (heatsink) of the D-PAK package; continuous drain current is limited to -35 A at VGS = -10 V and TC = 25 °C with a maximum VDS of -60 V. |
| 3 | Source | passive | Source of the MOSFET; the reverse diode forward current is limited to -35 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | -35 | A | VGS=-10V,TC=25°C | 3 |
| Continuous drain current | ID |  |  | -28 | A | VGS=-10V,TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | -140 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 559 | mJ | ID=-35A,RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Power dissipation | Ptot |  |  | 125 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -55 |  | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 |
| Thermal resistance, junction - case, bottom | RthJC |  |  | 1.2 | °C/W |  | 3 |
| Thermal resistance, junction - ambient (device on PCB, 6 cm² cooling area) | RthJA |  |  | 75 | °C/W | Device on PCB, 6 cm² cooling area | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -60 |  |  | V | VGS=0V,ID=-1mA | 3 |
| Gate threshold voltage | VGS(th) | -2.1 | -3 | -4 | V | VDS=VGS,ID=-1700µA | 3 |
| Zero gate voltage drain current | IDSS |  | -0.1 | -1 | µA | VDS=-60V,VGS=0V,Tj=25°C | 3 |
| Zero gate voltage drain current | IDSS |  | -10 | -100 | µA | VDS=-60V,VGS=0V,Tj=125°C | 3 |
| Gate-source leakage current | IGSS |  | -10 | -100 | nA | VGS=-20V,VDS=0V | 3 |
| Drain-source on-state resistance | RDS(on) |  | 32 | 38 | mΩ | VGS=-10V,ID=-35A | 3 |
| Diode continuous forward current | IS |  |  | -35 | A | TC=25°C | 4 |
| Diode pulse current | IS,pulse |  |  | -140 | A | TC=25°C | 4 |
| Diode forward voltage | VSD |  | -0.9 | -1.2 | V | VGS=0V,IF=-35A,Tj=25°C | 4 |
| Gate resistance | RG |  | 5 |  | Ω |  | 3 |
| Transconductance | gfs |  | 33 |  | S | /VDS/≥2/ID/RDS(on)max,ID=-35A | 3 |
| Input capacitance | Ciss |  | 2500 |  | pF | VGS=0V,VDS=-30V,f=1MHz | 4 |
| Output capacitance | Coss |  | 360 |  | pF | VGS=0V,VDS=-30V,f=1MHz | 4 |
| Reverse transfer capacitance | Crss |  | 83 |  | pF | VGS=0V,VDS=-30V,f=1MHz | 4 |
| Turn-on delay time | td(on) |  | 16 |  | ns | VDD=-30V,VGS=-10V,ID=-17.5A,RG,ext=1.6Ω | 4 |
| Rise time | tr |  | 19 |  | ns | VDD=-30V,VGS=-10V,ID=-17.5A,RG,ext=1.6Ω | 4 |
| Turn-off delay time | td(off) |  | 47 |  | ns | VDD=-30V,VGS=-10V,ID=-17.5A,RG,ext=1.6Ω | 4 |
| Fall time | tf |  | 19 |  | ns | VDD=-30V,VGS=-10V,ID=-17.5A,RG,ext=1.6Ω | 4 |
| Gate to source charge | Qgs |  | -14 |  | nC | VDD=-30V,ID=-35A,VGS=0 to -10V | 4 |
| Gate charge at threshold | Qg(th) |  | -8 |  | nC | VDD=-30V,ID=-35A,VGS=0 to -10V | 4 |
| Gate to drain charge | Qgd |  | -24 |  | nC | VDD=-30V,ID=-35A,VGS=0 to -10V | 4 |
| Switching charge | Qsw |  | -30 |  | nC | VDD=-30V,ID=-35A,VGS=0 to -10V | 4 |
| Gate charge total | Qg |  | -63 |  | nC | VDD=-30V,ID=-35A,VGS=0 to -10V | 4 |
| Gate plateau voltage | Vplateau |  | -5.5 |  | V | VDD=-30V,ID=-35A,VGS=0 to -10V | 4 |
| Output charge | Qoss |  | -28 |  | nC | VDD=-30V,VGS=0V | 4 |
| Reverse recovery time | trr |  | 63 |  | ns | VR=-30V,IF=-37A,diF/dt=-100A/µs | 4 |
| Reverse recovery charge | Qrr |  | 192 |  | nC | VR=-30V,IF=-37A,diF/dt=-100A/µs | 4 |

## CAD (KiCad official)

- Symbol: `IPD380P06NMATMA1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd380p06nmatma1-etched.step` / `ipd380p06nmatma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd380p06nmatma1.step` / `ipd380p06nmatma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590908522383159296) (10 pp, sha256 `48f522a4a771c19c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipd380p06nmatma1-datasheet.pdf)