# IPD380P06NMATMA1-VB

**VBsemi Elec** · MOSFETs · TO-252

IPD380P06NMATMA1-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with a threshold of -1.5 to -3 V. |
| 2 | D | passive | Drain, also the mounting tab, rated for VDS of -60 V and continuous ID of -50 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous body-diode current IS of -40 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -60 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1.5 |  | -3 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -50 | µA | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -100 | µA | VDS = - 60 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | -50 |  |  | A | VDS = - 5 V, VGS = - 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.02 |  | Ω | VGS = - 10 V, ID = - 17 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.03 | Ω | VGS = - 10 V, ID = - 40 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.035 | Ω | VGS = - 10 V, ID = - 40 A, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.025 |  | Ω | VGS = - 4.5 V, ID = - 14 A | 2 |
| Total Gate Charge | Qg |  | 110 | 165 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 40 A | 2 |
| Turn-On Delay Time | td(on) |  | 15 | 23 | ns | VDD = - 30 V, RL = 0.6 Ω, ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω | 2 |
| Rise Time | tr |  | 70 | 105 | ns | VDD = - 30 V, RL = 0.6 Ω, ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 175 | 260 | ns | VDD = - 30 V, RL = 0.6 Ω, ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω | 2 |
| Fall Time | tf |  | 175 | 260 | ns | VDD = - 30 V, RL = 0.6 Ω, ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω | 2 |
| Diode Continuous Current | IS |  |  | -40 | A | TC = 25 °C | 2 |
| Diode Pulsed Current | ISM |  |  | -80 | A | TC = 25 °C | 2 |
| Diode Forward Voltage | VSD |  | -1 | -1.6 | V | IF = - 40 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr |  | 45 | 70 | ns | IF = - 40 A, dI/dt = 100 A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | -60 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -50 | A | TC = 25 °C, TJ = 175 °C | 1 |
| Continuous Drain Current | ID |  |  | -40 | A | TC = 125 °C, TJ = 175 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -160 | A | TA = 25 °C | 1 |
| Avalanche Current | IAS |  |  | -50 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 125 | mJ | L = 0.1 mH | 1 |
| Power Dissipation | PD |  |  | 113 | W | TC = 25 °C | 1 |
| Power Dissipation | PD |  |  | 2.5 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA |  | 15 | 18 | °C/W | t ≤ 10 s | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA |  | 40 | 50 | °C/W | Steady State | 1 |
| Junction-to-Case Thermal Resistance | RthJC |  | 0.82 | 1.1 | °C/W |  | 1 |
| Forward Transconductance | gfs |  | 61 |  | S | VDS = - 15 V, ID = - 17 A | 2 |
| Input Capacitance | Ciss |  | 2950 |  | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 380 |  | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 305 |  | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs |  | 19 |  | nC | VDS = - 30 V, VGS = - 10 V, ID = - 40 A | 2 |
| Gate-Drain Charge | Qgd |  | 28 |  | nC | VDS = - 30 V, VGS = - 10 V, ID = - 40 A | 2 |

## CAD (KiCad official)

- Symbol: `IPD380P06NMATMA1-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd380p06nmatma1-vb-etched.step` / `ipd380p06nmatma1-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd380p06nmatma1-vb.step` / `ipd380p06nmatma1-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ipd380p06nmatma1-vb-datasheet.pdf) (7 pp, sha256 `15882e2eb22878d2`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipd380p06nmatma1-vb-datasheet.pdf)