component
IPD088N06N3G
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD088N06N3G
UMW · MOSFETs · TO-252
IPD088N06N3G from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet rates gate-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates the device at VDS 60 V and continuous drain current ID 50 A at TC=25°C (per the Absolute Maximum Ratings table). |
| 3 | S | passive | SOURCE terminal; the datasheet gives no source-specific limit beyond the device ratings (VDS 60 V, VGS ±20 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 50 | A | TC=25°C | 1 | ||
| Continuous drain current | ID | 47 | A | TC=100°C | 1 | ||
| Pulsed drain current | ID,pulse | 200 | A | 1 | |||
| Avalanche current, single pulse | EAS | 43 | mJ | ID=50A, RGS=25Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 71 | W | TC=25°C | 1 | ||
| Storage temperature | TJ,TSTG | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 2.1 | K/W | 2 | |||
| Thermal resistance, junction-ambient | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction-ambient | RthJA | 40 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=1mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=34µA | 2 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=60V, VGS=0V, TJ=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=60V, VGS=0V, TJ=125°C | 2 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20V, VDS=0V | 2 | |
| Drain-source on-state resistance | RDS(ON) | 7.1 | 8.8 | mΩ | VGS=10V, ID=50A | 2 | |
| Input capacitance | Ciss | 2900 | 3900 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | |
| Output capacitance | Coss | 640 | 850 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | |
| Reverse transfer capacitance | Crss | 23 | 48 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | |
| Diode forward voltage | VSD | 1.2 | V | VGS=0V, IF=50A, TJ=25°C | 3 |
CAD (KiCad official)
- Symbol:
IPD088N06N3G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd088n06n3g-etched.step/ipd088n06n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd088n06n3g.step/ipd088n06n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
03e6ed362402f755, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).