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IPD068P03L3G-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD068P03L3G-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IPD068P03L3G-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with threshold VGS(th) of -1.0 to -2.5 V and operation down to 4.5 V drive.
2 D passive Drain, connected to the exposed mounting tab; drain-source voltage is rated -30 V with continuous current of -80 A at TC=25℃.
3 S passive Source; body diode continuous source current is rated -80 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0V, ID = -250µA 2
Gate-body Leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current TJ=25℃ IDSS -1 μA VDS = -24V, VGS = 0V, TJ=25℃ 2
Zero Gate Voltage Drain Current TJ=55℃ IDSS -5 μA VDS = -24V, VGS = 0V, TJ=55℃ 2
Gate-Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 5.5 8.8 mΩ VGS = -10V, ID = -12A 2
Drain-Source On-Resistance RDS(on) 9 14 mΩ VGS = -4.5V, ID = -8A 2
Diode Forward Voltage VSD -1 V IS = -1A, VGS = 0V 2
Continuous Source Current IS -80 A VG=VD=0V, Force Current 2
Forward Transconductance gfs 28 S VDS = -5V, ID = -20A 2
Input Capacitance Ciss 4320 pF VDS = -15V, VGS =0V, f =1MHz 2
Output Capacitance Coss 529 pF VDS = -15V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 487 pF VDS = -15V, VGS =0V, f =1MHz 2
Gate Resistance Rg 4 Ω VDS = 0V, VGS= 0V, f=1.0MHz 2
Total Gate Charge Qg 45 nC VGS = -10V, VDS = -15V, ID= -15A 2
Gate-Source Charge Qgs 8.5 nC VGS = -10V, VDS = -15V, ID= -15A 2
Gate-Drain Charge Qgd 12.8 nC VGS = -10V, VDS = -15V, ID= -15A 2
Turn-On Delay Time td(on) 18.9 nS VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A 2
Rise Time tr 15.7 nS VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A 2
Turn-Off Delay Time td(off) 64.8 nS VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A 2
Fall Time tf 36.5 nS VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A 2
Drain-Source Voltage VDS -30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ -80 A VGS @ -10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ -42 A VGS @ -10V, TC=100℃ 1
Pulsed Drain Current IDM -172 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 31 mJ VDD= -25V, VGS= -10V, L= 0.1mH, IAS= -25A 1
Avalanche Current IAS -25 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 31.2 W TC=25℃ 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 43 ℃/W 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1

CAD (KiCad official)

  • Symbol: IPD068P03L3G-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ipd068p03l3g-hxy-etched.step / ipd068p03l3g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd068p03l3g-hxy.step / ipd068p03l3g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 017e463b2c17c568, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF