component

IPD050N03LGATMA1

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

IPD050N03LGATMA1

UMW · MOSFETs · TO-252

IPD050N03LGATMA1 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 30 V N-channel MOSFET; gate-source voltage is rated ±20 V (VGS) per the absolute maximum ratings.
2 D passive DRAIN terminal of the 30 V N-channel MOSFET (VDS = 30 V per the features list).
3 S passive SOURCE terminal of the N-channel MOSFET; the datasheet gives no further pin-specific limits.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Pulsed drain current ID,pulse 350 A 1
Avalanche current, single pulse IAS 50 A 1
Avalanche energy, single pulse EAS 60 mJ ID=35A, RGS=25Ω 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 68 W TC=25°C 1
Operating and storage temperature TJ,TSTG -55 175 °C 1
Continuous drain current ID 50 A VGS=10V, TC=25°C 1
Reverse diode dv/dt dv/dt 6 kV/µs di/dt=200 A/µs, Tj,max=175°C 1
Thermal resistance, junction-case RthJC 2.2 K/W 2
Thermal resistance, junction-ambient, SMD version, device on PCB, minimal footprint RthJA 100 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction-ambient, SMD version, device on PCB, 6 cm² cooling area RthJA 50 K/W SMD version, device on PCB, 6 cm² cooling area 2
Drain-source breakdown voltage V(BR)DSS 30 V VGS=0V, ID=1mA 2
Gate threshold voltage VGS(th) 1.5 2.2 V VDS=VGS, ID=250µA 2
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 2
Zero gate voltage drain current IDSS 0.1 1 µA VDS=30V, VGS=0V, TJ=25°C 2
Zero gate voltage drain current IDSS 10 100 µA VDS=30V, VGS=0V, TJ=125°C 2
Drain-source on-state resistance RDS(ON) 5.8 7.3 mΩ VGS=4.5V, ID=30A 2
Drain-source on-state resistance RDS(ON) 4.2 5 mΩ VGS=10V, ID=30A 2
Input capacitance Ciss 2400 3200 pF VGS=0V, VDS=15V, f=1MHz 2
Output capacitance Coss 920 1200 pF VGS=0V, VDS=15V, f=1MHz 2
Diode forward voltage VSD 0.86 1.1 V VGS=0V, IF=30A, TJ=25°C 3

CAD (KiCad official)

  • Symbol: IPD050N03LGATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd050n03lgatma1-etched.step / ipd050n03lgatma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd050n03lgatma1.step / ipd050n03lgatma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 3d98fe456d626a51, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF