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IPD050N03LG-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IPD050N03LG-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet gives gate-source voltage limits of ±20V (VGS) and an RDS(ON) of 5mΩ max at VGS=10V.
2 D passive Drain terminal; rated VDS of 30V with continuous drain current ID of 100A at TC=25℃ (VGS @ 10V).
3 S passive Source terminal; continuous source current IS is rated at 80A and pulsed source current ISM at 160A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 100 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 57 A VGS @ 10V, TC=100℃ 1
Pulsed Drain Current IDM 160 A 1
Single Pulse Avalanche Energy EAS 115.2 mJ 1
Avalanche Current IAS 48 A 1
Total Power Dissipation PD@TC=25℃ 53 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 5.5 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 1.7 3.4 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 80 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 160 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: IPD050N03LG-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ipd050n03lg-hxy-etched.step / ipd050n03lg-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd050n03lg-hxy.step / ipd050n03lg-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 03c631a0218d7442, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF