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IPD042P03L3G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD042P03L3G-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IPD042P03L3G-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold of -1 to -2.5 V at ID=-250μA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage is -30 V max and continuous drain current is -120 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous source current is -108 A with VSD of -1.2 V max at IS=-20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -120 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | -80 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | -470 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 580 | mJ | note2 | 1 | ||
| Power Dissipation | PD | 100 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.4 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3.7 | 4.5 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 6 | 8.2 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -108 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V, IS=-20A | 2 |
CAD (KiCad official)
- Symbol:
IPD042P03L3G-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
ipd042p03l3g-hxy-etched.step/ipd042p03l3g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd042p03l3g-hxy.step/ipd042p03l3g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
8432b9eb77df2e6a, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).