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IPB90R340C3

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPB90R340C3

Infineon Technologies · MOSFETs · TO-263

IPB90R340C3 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; static gate-source voltage limit is ±20 V (±30 V AC, f>1 Hz), with threshold 2.5 to 3.5 V at VDS=VGS, ID=1 mA.
2 D passive Drain pin, also connected to the tab (2 (tab)); VDS rated 900 V and continuous drain current 15 A at TC=25 °C.
3 S passive Source pin, connected to the body diode anode side of the MOSFET; return for the 15 A continuous drain current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TC=25 °C ID 15 A TC=25 °C 1
Continuous drain current, TC=100 °C ID 9.5 A TC=100 °C 1
Pulsed drain current ID,pulse 34 A TC=25 °C 1
Avalanche energy, single pulse EAS 678 mJ ID=3.1 A, VDD=50 V 1
Avalanche energy, repetitive tAR EAR 1 mJ ID=3.1 A, VDD=50 V 1
Avalanche current, repetitive tAR IAR 3.1 A 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400 V 1
Gate source voltage, static VGS -30 30 V static, printed as ±30 1
Gate source voltage, AC (f>1 Hz) VGS -20 20 V AC (f>1 Hz), printed as ±20 1
Power dissipation Ptot 208 W TC=25 °C 1
Operating and storage temperature TJ, Tstg -55 150 °C 1
Continuous diode forward current IS 9.2 A TC=25 °C 2
Diode pulse current IS,pulse 34 A 2
Reverse diode dv/dt dv/dt 4 V/ns 2
Thermal resistance, junction-case RthJC 0.6 K/W 2
Thermal resistance, junction-ambient, SMD on PCB at minimum footprint RthJA 62 K/W SMD version, device on PCB at minimum footprint 2
Thermal resistance, junction-ambient, SMD on PCB at 6 cm² cooling area RthJA 35 K/W SMD version, device on PCB at 6 cm² cooling area 2
Soldering temperature, reflow only Tsold 260 °C reflow soldering, MSL1 2
Drain-source breakdown voltage V(BR)DSS 900 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS, ID=1 mA 2
Zero gate voltage drain current, Tj=25 °C IDSS 2 µA VDS=900 V, VGS=0 V, Tj=25 °C 2
Gate-source leakage current IGSS 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance, Tj=25 °C RDS(on) 0.28 0.34 W VGS=10 V, ID=9.2 A, Tj=25 °C 2
Diode forward voltage VSD 0.8 1.2 V VGS=0 V, IF=9.2 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: IPB90R340C3
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb90r340c3-etched.step / ipb90r340c3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb90r340c3.step / ipb90r340c3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 90f6605b2d4be378, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF