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IPB80R290C3A

Public Made by Adom

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Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Datasheet

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Contents

README

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IPB80R290C3A

Infineon Technologies · MOSFETs · TO-263

IPB80R290C3A from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; static gate-source voltage limit is ±20 V, with a gate threshold of 2.1 V min, 3 V typ and 3.9 V max.
2 D passive Drain pin, also connected to the tab; drain-source voltage is 800 V and continuous drain current is 17 A at TC=25 °C.
3 S passive Source pin; the body diode continuous forward current is 17 A at TC=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 17 A TC=25 °C 1
Continuous drain current ID 11 A TC=100 °C 1
Pulsed drain current ID,pulse 51 A TC=25 °C 1
Avalanche energy, single pulse EAS 670 mJ ID=3.4 A, VDD=50 V 1
Avalanche energy, repetitive EAR 0.5 mJ ID=17 A, VDD=50 V 1
Avalanche current, repetitive IAR 17 A 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0…640 V 1
Gate source voltage (static) VGS -20 20 V static 1
Power dissipation Ptot 227 W TC=25 °C 1
Operating temperature Tj -40 150 °C 1
Storage temperature Tstg -40 150 °C 1
Continuous diode forward current IS 17 A TC=25 °C 2
Diode pulse current IS,pulse 51 A 2
Reverse diode dv/dt dv/dt 4 V/ns 2
Thermal resistance, junction - case RthJC 0.55 K/W 2
Thermal resistance, junction - ambient (SMD, device on PCB) RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Soldering temperature, reflow soldering Tsold 260 °C MSL1; 10 s 2
Drain-source breakdown voltage V(BR)DSS 800 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 2.1 3 3.9 V VDS=VGS, ID=1.0 mA 2
Zero gate voltage drain current IDSS 25 µA VDS=800 V, VGS=0 V, Tj=25 °C 2
Gate-source leakage current IGSS 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 0.25 0.29 Ω VGS=10 V, ID=11 A, Tj=25 °C 2
Gate charge total Qg 88 117 nC VDD=640 V, ID=17 A, VGS=0 to 10 V 3
Diode forward voltage VSD 1 1.2 V VGS=0 V, IF=IS, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: IPB80R290C3A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb80r290c3a-etched.step / ipb80r290c3a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb80r290c3a.step / ipb80r290c3a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 eec5067fe313811e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF