component
IPB70N04S406ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IPB70N04S406ATMA1
Infineon Technologies · MOSFETs · TO-263
IPB70N04S406ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input of the N-channel enhancement-mode MOSFET, with a gate-source voltage rating of ±20 V. |
| 2 | Drain | passive | Drain terminal with a drain-source voltage of 40 V and a continuous drain current of 70 A at TC=25°C, VGS=10V. |
| 3 | Source | passive | Source terminal of the MOSFET, with the body diode continuous forward current rated at 70 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
IPB70N04S406ATMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb70n04s406atma1-etched.step/ipb70n04s406atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb70n04s406atma1.step/ipb70n04s406atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
c8705b5914524d87, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).