component
IPB35N10S3L26ATMA1-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPB35N10S3L26ATMA1-JSM
JSMSEMI · MOSFETs · TO-263-2L
IPB35N10S3L26ATMA1-JSM from JSMSEMI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V absolute maximum, with a threshold of 2.0 V min to 4.0 V max at VDS = VGS and ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage is rated at 100 V maximum, and continuous drain current is 35 A. |
| 3 | S | passive | Source; continuous body diode current is 35 A maximum and pulsed diode forward current is 140 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-263-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
IPB35N10S3L26ATMA1-JSM - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
ipb35n10s3l26atma1-jsm-etched.step/ipb35n10s3l26atma1-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb35n10s3l26atma1-jsm.step/ipb35n10s3l26atma1-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (6 pp, sha256
3aca5c7ab70d54f5, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).