component
IPB160N04S3-H2
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263-7. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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ipb160n04s3-h2: specified limits as data (metadata.characteristics, 32 rows from the datasheet)
2 files changed
+430
README.md+39@@ -32,6 +32,45 @@ Same part, different packaging or reel option. - `IPB160N04S3-H2` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous drain current | ID | | | 160 | A | TC=25°C, VGS=10V | 1 |+| Continuous drain current | ID | | | 157 | A | TC=100°C, VGS=10V | 1 |+| Gate source voltage | VGS | -20 | | 20 | V | | 1 |+| Operating and storage temperature | Tj, Tstg | -55 | | 175 | °C | | 1 |+| Avalanche energy, single pulse | EAS | | | 898 | mJ | ID=80 A | 1 |+| Power dissipation | Ptot | | | 214 | W | TC=25°C | 1 |+| Pulsed drain current | ID,pulse | | | 640 | A | TC=25°C | 1 |+| Thermal resistance, junction - case | RthJC | | | 0.7 | K/W | | 2 |+| Thermal resistance, junction - ambient, SMD version on PCB | RthJA | | | 62 | K/W | device on PCB, minimal footprint | 2 |+| Thermal resistance, junction - ambient, SMD version on PCB | RthJA | | | 40 | K/W | device on PCB, 6 cm2 cooling area | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 40 | | | V | VGS=0 V, ID=1 mA | 2 |+| Gate threshold voltage | VGS(th) | 2.1 | 3 | 4 | V | VDS=VGS, ID=150 µA | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=40 V, VGS=0 V, Tj=25°C | 2 |+| Zero gate voltage drain current | IDSS | | | 100 | µA | VDS=40 V, VGS=0 V, Tj=125°C | 2 |+| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20 V, VDS=0 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 1.6 | 2.1 | mΩ | VGS=10 V, ID=80 A | 2 |+| Input capacitance | Ciss | | 7400 | 9600 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |+| Output capacitance | Coss | | 2000 | 2600 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |+| Reverse transfer capacitance | Crss | | 310 | 465 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |+| Gate to source charge | Qgs | | 38 | 50 | nC | VDD=32 V, ID=80 A, VGS=0 to 10 V | 3 |+| Gate to drain charge | Qgd | | 25 | 45 | nC | VDD=32 V, ID=80 A, VGS=0 to 10 V | 3 |+| Gate charge total | Qg | | 110 | 145 | nC | VDD=32 V, ID=80 A, VGS=0 to 10 V | 3 |+| Diode continuous forward current | IS | | | 160 | A | | 3 |+| Diode pulse current | IS,pulse | | | 640 | A | | 3 |+| Diode forward voltage | VSD | | 0.85 | 1.3 | V | VGS=0 V, IF=80 A, Tj=25°C | 2 |+| Turn-on delay time | td(on) | | 30 | | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 |+| Rise time | tr | | 16 | | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 |+| Turn-off delay time | td(off) | | 46 | | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 |+| Fall time | tf | | 17 | | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 |+| Gate plateau voltage | Vplateau | | 5.2 | | V | | 3 |+| Reverse recovery time | trr | | 60 | | ns | VR=20 V, IF=50 A, diF/dt=100 A/µs, TC=25°C | 3 |+| Reverse recovery charge | Qrr | | 95 | | nC | VR=20 V, IF=50 A, diF/dt=100 A/µs, TC=25°C | 3 |+ ## CAD (KiCad official) - Symbol: `IPB160N04S3-H2`
page.json+391@@ -146,6 +146,397 @@ "Package": "TO-263-7", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5862f0f8ed4e41d9",+ "rows": [+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "TC=25°C, VGS=10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 157,+ "conditions": "TC=100°C, VGS=10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 898,+ "conditions": "ID=80 A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 214,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 640,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD version on PCB",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "device on PCB, minimal footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD version on PCB",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "device on PCB, 6 cm2 cooling area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0 V, ID=1 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.1,+ "typ": 3,+ "max": 4,+ "conditions": "VDS=VGS, ID=150 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=40 V, VGS=0 V, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS=40 V, VGS=0 V, Tj=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=20 V, VDS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 1.6,+ "max": 2.1,+ "conditions": "VGS=10 V, ID=80 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 7400,+ "max": 9600,+ "conditions": "VGS=0 V, VDS=25 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2000,+ "max": 2600,+ "conditions": "VGS=0 V, VDS=25 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 310,+ "max": 465,+ "conditions": "VGS=0 V, VDS=25 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 38,+ "max": 50,+ "conditions": "VDD=32 V, ID=80 A, VGS=0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 25,+ "max": 45,+ "conditions": "VDD=32 V, ID=80 A, VGS=0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 110,+ "max": 145,+ "conditions": "VDD=32 V, ID=80 A, VGS=0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode continuous forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 640,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.85,+ "max": 1.3,+ "conditions": "VGS=0 V, IF=80 A, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 46,+ "max": null,+ "conditions": "VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate plateau voltage",+ "symbol": "Vplateau",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 5.2,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "VR=20 V, IF=50 A, diF/dt=100 A/µs, TC=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 95,+ "max": null,+ "conditions": "VR=20 V, IF=50 A, diF/dt=100 A/µs, TC=25°C",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [