component
IPB160N04S3-H2
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263-7. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownIPB160N04S3-H2
Infineon Technologies · MOSFETs · TO-263-7
IPB160N04S3-H2 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated MOSFET control terminal; max VGS ±20 V, threshold VGS(th) 2.1-4.0 V (typ 3.0 V). Drives the N-channel enhancement-mode transistor on/off. |
| 2 | S | passive | Source. Common source terminal of the N-channel MOSFET; carries up to 160 A continuous drain-source current. Pins 2, 3, 5, 6, and 7 are all internally connected to the source. |
| 3 | S | passive | Source. Internally connected to pins 2, 5, 6, 7. Multiple source pins reduce package inductance and share current for the 160 A rated device. |
| 4 | D | passive | Drain. Also connected to the exposed thermal tab of the PG-TO263-7-3 package for heat-sinking and drain current conduction. Rated VDS = 40 V, ID = 160 A. |
| 5 | S | passive | Source. Internally connected to pins 2, 3, 6, 7. Multiple source pins reduce package inductance and share current for the 160 A rated device. |
| 6 | S | passive | Source. Internally connected to pins 2, 3, 5, 7. Multiple source pins reduce package inductance and share current for the 160 A rated device. |
| 7 | S | passive | Source. Internally connected to pins 2, 3, 5, 6. Multiple source pins reduce package inductance and share current for the 160 A rated device. |
| TAB | D | passive | Exposed drain tab of the PG-TO263-7-3 package. Electrically connected to pin 4 (Drain); provides the primary thermal path to the PCB copper pour (RthJC = 0.7 K/W typical). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
IPB160N04S3-H2
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 160 | A | TC=25°C, VGS=10V | 1 | ||
| Continuous drain current | ID | 157 | A | TC=100°C, VGS=10V | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Avalanche energy, single pulse | EAS | 898 | mJ | ID=80 A | 1 | ||
| Power dissipation | Ptot | 214 | W | TC=25°C | 1 | ||
| Pulsed drain current | ID,pulse | 640 | A | TC=25°C | 1 | ||
| Thermal resistance, junction - case | RthJC | 0.7 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD version on PCB | RthJA | 62 | K/W | device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD version on PCB | RthJA | 40 | K/W | device on PCB, 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 40 | V | VGS=0 V, ID=1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.1 | 3 | 4 | V | VDS=VGS, ID=150 µA | 2 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=40 V, VGS=0 V, Tj=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VDS=40 V, VGS=0 V, Tj=125°C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 1.6 | 2.1 | mΩ | VGS=10 V, ID=80 A | 2 | |
| Input capacitance | Ciss | 7400 | 9600 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 2000 | 2600 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 310 | 465 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Gate to source charge | Qgs | 38 | 50 | nC | VDD=32 V, ID=80 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 25 | 45 | nC | VDD=32 V, ID=80 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Qg | 110 | 145 | nC | VDD=32 V, ID=80 A, VGS=0 to 10 V | 3 | |
| Diode continuous forward current | IS | 160 | A | 3 | |||
| Diode pulse current | IS,pulse | 640 | A | 3 | |||
| Diode forward voltage | VSD | 0.85 | 1.3 | V | VGS=0 V, IF=80 A, Tj=25°C | 2 | |
| Turn-on delay time | td(on) | 30 | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 | ||
| Rise time | tr | 16 | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 | ||
| Turn-off delay time | td(off) | 46 | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 | ||
| Fall time | tf | 17 | ns | VDD=20 V, VGS=10 V, ID=80 A, RG=3.3 Ω | 3 | ||
| Gate plateau voltage | Vplateau | 5.2 | V | 3 | |||
| Reverse recovery time | trr | 60 | ns | VR=20 V, IF=50 A, diF/dt=100 A/µs, TC=25°C | 3 | ||
| Reverse recovery charge | Qrr | 95 | nC | VR=20 V, IF=50 A, diF/dt=100 A/µs, TC=25°C | 3 |
CAD (KiCad official)
- Symbol:
IPB160N04S3-H2 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
ipb160n04s3-h2-etched.step/ipb160n04s3-h2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb160n04s3-h2.step/ipb160n04s3-h2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
5862f0f8ed4e41d9, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).