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IPB117N20NFDATMA1

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Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPB117N20NFDATMA1

Infineon Technologies · MOSFETs · TO-263

IPB117N20NFDATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal, with gate-source voltage rated from -20 V to 20 V and total gate charge of 65 nC typical at VDS=100 V and ID=84 A.
2 Drain passive Drain terminal, also the tab of the package, rated for a drain-source voltage of 200 V and a continuous drain current of 84 A at TC=25°C.
3 Source passive Source terminal, the reference for the gate-source voltage rating of -20 V to 20 V, with no separate pin limit stated in the datasheet.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 84 A TC=25°C 4
Continuous drain current ID 60 A TC=100°C 4
Pulsed drain current ID,pulse 336 A TC=25°C 4
Avalanche energy, single pulse EAS 375 mJ ID=67A,RGS=25Ω 4
Reverse diode peak dv/dt dv/dt 60 kV/µs ID=160A,VDS=100V,di/dt=1500A/µs,Tj,max=175°C 4
Gate source voltage VGS -20 20 V 4
Power dissipation Ptot 300 W TC=25°C 4
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 4
Thermal resistance, junction - case RthJC 0.3 0.5 K/W 4
Thermal resistance, junction - ambient, minimal footprint RthJA 62 K/W 4
Thermal resistance, junction - ambient, 6 cm2 cooling area RthJA 40 K/W Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 copper area for drain connection; PCB vertical in still air 4
Drain-source breakdown voltage V(BR)DSS 200 V VGS=0V,ID=1mA 5
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA 5
Zero gate voltage drain current IDSS 0.1 1 µA VDS=160V,VGS=0V,Tj=25°C 5
Zero gate voltage drain current IDSS 10 100 µA VDS=160V,VGS=0V,Tj=125°C 5
Gate-source leakage current IGSS 1 100 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 10.3 11.7 mΩ VGS=10V,ID=84A 5
Gate resistance RG 2.4 3.6 Ω 5
Transconductance gfs 70 139 S /VDS/>2/ID/RDS(on)max,ID=84A 5
Input capacitance Ciss 5000 6650 pF VGS=0V,VDS=100V,f=1MHz 5
Output capacitance Coss 400 532 pF VGS=0V,VDS=100V,f=1MHz 5
Reverse transfer capacitance Crss 6 13 pF VGS=0V,VDS=100V,f=1MHz 5
Gate charge total Qg 65 87 nC VDD=100V,ID=84A,VGS=0to10V 5
Diode continuous forward current IS 84 A TC=25°C 6
Diode pulse current IS,pulse 336 A TC=25°C 6
Diode hard commutation current IS,hard 160 A TC=25°C,diF/dt=1500A/µs 6
Diode forward voltage VSD 1 1.2 V VGS=0V,IF=84A,Tj=25°C 6
Reverse recovery time trr 144 288 ns VR=100V,IF=56A,diF/dt=100A/µs 6

CAD (KiCad official)

  • Symbol: IPB117N20NFDATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb117n20nfdatma1-etched.step / ipb117n20nfdatma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb117n20nfdatma1.step / ipb117n20nfdatma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 066342785801f3bd, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF