component
IPB107N20N3G
Public Made by Adomby adom
Tokmas MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPB107N20N3G
Tokmas · MOSFETs · TO-263
IPB107N20N3G from Tokmas, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGSS is rated ±20 V, and gate threshold VGS(th) is 2.4 V min to 3.6 V max at ID=250 µA. |
| 2 | D | passive | Drain terminal; BVDSS is 200 V min, and continuous drain current ID is 110 A at TC=25°C (silicon limit). |
| 3 | S | passive | Source terminal; continuous source current IS is 110 A max and pulsed source current ISM is 430 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.4 | 3.6 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-source leakage current | IDSS | 1 | μA | VDS=200V, VGS=0V, TJ=25°C | 2 | ||
| Drain-source leakage current | IDSS | 10 | mA | VDS=200V, VGS=0V, TJ=150°C | 2 | ||
| Gate leakage current, Forward | IGSSF | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate leakage current, Reverse | IGSSR | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 9.2 | 11.5 | mΩ | VGS=10 V, ID=50 A, TJ=25°C | 2 | |
| Drain-source on-state resistance | RDS(on) | 17.04 | mΩ | VGS=10 V, ID=50 A, TJ=150°C | 2 | ||
| Continuous Source Current | IS | 110 | A | 2 | |||
| Pulsed Source Current | ISM | 430 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.1 | V | VGS=0V, IS=50A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDSS | 200 | V | 1 | |||
| Continuous drain current (Silicon limit) | ID | 110 | A | TC = 25°C, Silicon limit | 1 | ||
| Continuous drain current (Package limit) | ID | 130 | A | TC = 25°C, Package limit | 1 | ||
| Continuous drain current (Silicon limit) | ID | 65 | A | TC = 100°C, Silicon limit | 1 | ||
| Pulsed drain current | IDM | 430 | A | 1 | |||
| Gate-Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche energy | EAS | 1122 | mJ | 1 | |||
| Power Dissipation | PD | 320 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Soldering temperature (wave soldering, leads) | Tsold | 260 | °C | 1.6mm from case for 10s | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.26 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | °C/W | Device in still air box, one cubic foot (note 4) | 1 |
CAD (KiCad official)
- Symbol:
IPB107N20N3G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb107n20n3g-etched.step/ipb107n20n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb107n20n3g.step/ipb107n20n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (6 pp, sha256
0171b4804089c5cd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPB107N20N3G
**Tokmas** · MOSFETs · TO-263
IPB107N20N3G from Tokmas, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGSS is rated ±20 V, and gate threshold VGS(th) is 2.4 V min to 3.6 V max at ID=250 µA. |
| 2 | D | passive | Drain terminal; BVDSS is 200 V min, and continuous drain current ID is 110 A at TC=25°C (silicon limit). |
| 3 | S | passive | Source terminal; continuous source current IS is 110 A max and pulsed source current ISM is 430 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 200 | | | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(th) | 2.4 | | 3.6 | V | VDS=VGS, ID=250uA | 2 |
| Drain-source leakage current | IDSS | | | 1 | μA | VDS=200V, VGS=0V, TJ=25°C | 2 |
| Drain-source leakage current | IDSS | | | 10 | mA | VDS=200V, VGS=0V, TJ=150°C | 2 |
| Gate leakage current, Forward | IGSSF | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate leakage current, Reverse | IGSSR | | | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) | | 9.2 | 11.5 | mΩ | VGS=10 V, ID=50 A, TJ=25°C | 2 |
| Drain-source on-state resistance | RDS(on) | | 17.04 | | mΩ | VGS=10 V, ID=50 A, TJ=150°C | 2 |
| Continuous Source Current | IS | | | 110 | A | | 2 |
| Pulsed Source Current | ISM | | | 430 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.1 | V | VGS=0V, IS=50A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDSS | | | 200 | V | | 1 |
| Continuous drain current (Silicon limit) | ID | | | 110 | A | TC = 25°C, Silicon limit | 1 |
| Continuous drain current (Package limit) | ID | | | 130 | A | TC = 25°C, Package limit | 1 |
| Continuous drain current (Silicon limit) | ID | | | 65 | A | TC = 100°C, Silicon limit | 1 |
| Pulsed drain current | IDM | | | 430 | A | | 1 |
| Gate-Source voltage | VGSS | -20 | | 20 | V | | 1 |
| Avalanche energy | EAS | | | 1122 | mJ | | 1 |
| Power Dissipation | PD | | | 320 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Soldering temperature (wave soldering, leads) | Tsold | | | 260 | °C | 1.6mm from case for 10s | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 0.26 | | °C/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62 | °C/W | Device in still air box, one cubic foot (note 4) | 1 |
## CAD (KiCad official)
- Symbol: `IPB107N20N3G`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `ipb107n20n3g-etched.step` / `ipb107n20n3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipb107n20n3g.step` / `ipb107n20n3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tokmas datasheet](docs/ipb107n20n3g-datasheet.pdf) (6 pp, sha256 `0171b4804089c5cd`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipb107n20n3g-datasheet.pdf)