component
IPB065N10N3G
Public Made by Adomby adom
UMW MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| ipb065n10n3g-etched.glb | 13d ago |
| ipb065n10n3g-etched.step | 13d ago |
| ipb065n10n3g-hero.glb | 13d ago |
| ipb065n10n3g-hero.overlay.json | 13d ago |
| ipb065n10n3g.glb | 13d ago |
| ipb065n10n3g.kicad_mod | 13d ago |
| ipb065n10n3g.kicad_sym | 13d ago |
| ipb065n10n3g.lbr | 13d ago |
| ipb065n10n3g.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
IPB065N10N3G
UMW · MOSFETs · TO-263
IPB065N10N3G from UMW, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at 20 V (VGS max 20 V, min -20 V). |
| 2 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for continuous drain current of 80 A at TC=25°C. |
| 3 | SOURCE | passive | Source terminal of the N-channel MOSFET, carrying the return current of the drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 80 | A | TC=25°C | 1 | ||
| Continuous drain current | ID | 73 | A | TC=100°C | 1 | ||
| Pulsed drain current | ID,pulse | 320 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 160 | mJ | ID=80A, RGS=25Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 150 | W | TC=25°C | 1 | ||
| Operating junction and storage temperature | TJ,TSTG | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 1 | K/W | 2 | |||
| Thermal resistance, junction-ambient, minimal footprint | RthJA | 62 | K/W | 2 | |||
| Thermal resistance, junction-ambient, 6 cm² cooling area | RthJA | 40 | K/W | 2 | |||
| Drain-source on-state resistance | RDS(ON) | 5.9 | mΩ | VGS=10V, ID=80A | 1 |
CAD (KiCad official)
- Symbol:
IPB065N10N3G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb065n10n3g-etched.step/ipb065n10n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb065n10n3g.step/ipb065n10n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
0b510a0ca37a576d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).