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IPB060N15N5
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Tokmas MOSFETs, TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPB060N15N5
Tokmas · MOSFETs · TO-263-7L
IPB060N15N5 from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate (G) is the control terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific voltage or current limit for this pin (the VGS limit of ±25 V is a device rating at TC = 25 ℃). |
| 2 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 3 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 4 | Drain | passive | Drain (D) is the main drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin (the VDS limit of 150 V is a device rating at TC = 25 ℃). |
| 5 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 6 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 7 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263-7L |
| Category | Transistors/Thyristors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | TC = 25 ℃ | 2 | ||
| Gate-Source Voltage | VGS | -25 | 25 | V | TC = 25 ℃ | 2 | |
| Drain Current (DC) | ID | 220 | A | TC = 25 ℃, VGS = 10 V | 2 | ||
| Drain Current (DC) | ID | 98 | A | TC = 100 ℃, VGS = 10 V | 2 | ||
| Drain Current (Pulsed) | IDM | 552 | A | TC = 25 ℃, VGS = 10 V | 2 | ||
| Drain power dissipation | Ptot | 250 | W | TC = 25 ℃ | 2 | ||
| Storage Temperature | Tstg | -55 | 175 | ℃ | 2 | ||
| Junction Temperature | TJ | 175 | ℃ | 2 | |||
| Continuous-Source Current | IS | 220 | A | TC = 25 ℃ | 2 | ||
| Single Pulsed Avalanche Current | IAS | 160 | A | VDD=100V , L=0.05mH | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 1250 | mJ | VDD=100V , L=1.0mH | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 32 | ℃/W | Surface Mounted on minimum footprint pad area | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 0.45 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS = 0 V, IDS = 250 μA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, IDS = 250 μA | 3 | |
| Drain Leakage Current | IDSS | 1 | μA | VDS = 120 V, VGS = 0 V | 3 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = 0 V, VGS = ± 25 V | 3 | |
| On-State Resistance | RDS(ON) | 4.5 | 5 | mΩ | VGS = 10 V, IDS = 50 A | 3 | |
| On-State Resistance | RDS(ON) | 5 | 6 | mΩ | VGS = 6 V, IDS = 25 A | 3 | |
| Diode Forward Voltage | VSD | 1.3 | V | ISD = 50 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
IPB060N15N5 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin4 - 3D model: TO-263-7L (KiCad packages3D, STEP)
- 3D model files:
ipb060n15n5-etched.step/ipb060n15n5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb060n15n5.step/ipb060n15n5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (7 pp, sha256
acdff14601471534, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPB060N15N5
**Tokmas** · MOSFETs · TO-263-7L
IPB060N15N5 from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate (G) is the control terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific voltage or current limit for this pin (the VGS limit of ±25 V is a device rating at TC = 25 ℃). |
| 2 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 3 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 4 | Drain | passive | Drain (D) is the main drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin (the VDS limit of 150 V is a device rating at TC = 25 ℃). |
| 5 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 6 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
| 7 | Source | passive | Source (S) is a main source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit for this pin. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263-7L |
| Category | Transistors/Thyristors |
| Pins | 7 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | | | V | TC = 25 ℃ | 2 |
| Gate-Source Voltage | VGS | -25 | | 25 | V | TC = 25 ℃ | 2 |
| Drain Current (DC) | ID | | | 220 | A | TC = 25 ℃, VGS = 10 V | 2 |
| Drain Current (DC) | ID | | | 98 | A | TC = 100 ℃, VGS = 10 V | 2 |
| Drain Current (Pulsed) | IDM | | | 552 | A | TC = 25 ℃, VGS = 10 V | 2 |
| Drain power dissipation | Ptot | | | 250 | W | TC = 25 ℃ | 2 |
| Storage Temperature | Tstg | -55 | | 175 | ℃ | | 2 |
| Junction Temperature | TJ | | | 175 | ℃ | | 2 |
| Continuous-Source Current | IS | | | 220 | A | TC = 25 ℃ | 2 |
| Single Pulsed Avalanche Current | IAS | | | 160 | A | VDD=100V , L=0.05mH | 2 |
| Single Pulsed Avalanche Energy | EAS | | | 1250 | mJ | VDD=100V , L=1.0mH | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 32 | ℃/W | Surface Mounted on minimum footprint pad area | 2 |
| Thermal Resistance Junction to Case | RθJC | | | 0.45 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS = 0 V, IDS = 250 μA | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, IDS = 250 μA | 3 |
| Drain Leakage Current | IDSS | | | 1 | μA | VDS = 120 V, VGS = 0 V | 3 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS = 0 V, VGS = ± 25 V | 3 |
| On-State Resistance | RDS(ON) | | 4.5 | 5 | mΩ | VGS = 10 V, IDS = 50 A | 3 |
| On-State Resistance | RDS(ON) | | 5 | 6 | mΩ | VGS = 6 V, IDS = 25 A | 3 |
| Diode Forward Voltage | VSD | | | 1.3 | V | ISD = 50 A, VGS = 0 V | 3 |
## CAD (KiCad official)
- Symbol: `IPB060N15N5`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin4`
- 3D model: TO-263-7L (KiCad packages3D, STEP)
- 3D model files: `ipb060n15n5-etched.step` / `ipb060n15n5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipb060n15n5.step` / `ipb060n15n5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tokmas datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921050761359360) (7 pp, sha256 `acdff14601471534`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipb060n15n5-datasheet.pdf)