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IPB049NE7N3G

Infineon Technologies · MOSFETs · TO-263

IPB049NE7N3G from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin of the N-channel OptiMOS 3 MOSFET, with a maximum gate-source voltage of ±20 V.
2 D passive Drain pin (also the tab) of the MOSFET, rated for VDS of 75 V and continuous drain current of 80 A at TC=25 °C.
3 S passive Source pin of the MOSFET, connected to the source terminal of the N-channel device.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: IPB049NE7N3G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb049ne7n3g-etched.step / ipb049ne7n3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb049ne7n3g.step / ipb049ne7n3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 20ac8c53b3a6c927, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF