main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers ipb039n10n3gatma1: viewers · Ray 9d ago
ipb039n10n3gatma1-etched.glb Publish 0.1.0 · Ray 9d ago
ipb039n10n3gatma1-etched.step ipb039n10n3gatma1: factory component page (tier=mfr) · Ray 9d ago
ipb039n10n3gatma1-hero.glb ipb039n10n3gatma1: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
ipb039n10n3gatma1-hero.overlay.json Publish 0.1.0 · Ray 9d ago
ipb039n10n3gatma1.glb Publish 0.1.0 · Ray 9d ago
ipb039n10n3gatma1.kicad_mod Publish 0.1.0 · Ray 9d ago
ipb039n10n3gatma1.kicad_sym Publish 0.1.0 · Ray 9d ago
ipb039n10n3gatma1.lbr Publish 0.1.0 · Ray 9d ago
ipb039n10n3gatma1.step Publish 0.1.0 · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago

IPB039N10N3GATMA1

Infineon Technologies · MOSFETs · TO-263-7

IPB039N10N3GATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2 S passive Source of the MOSFET, connected in parallel with pins 3, 5, 6 and 7 for a continuous drain current of 160 A at TC=25 °C.
3 S passive Source of the MOSFET, connected in parallel with pins 2, 5, 6 and 7 for a continuous drain current of 160 A at TC=25 °C.
4 D passive Drain of the MOSFET, shared with the tab, with a drain-source voltage of 100 V.
5 S passive Source of the MOSFET, connected in parallel with pins 2, 3, 6 and 7 for a continuous drain current of 160 A at TC=25 °C.
6 S passive Source of the MOSFET, connected in parallel with pins 2, 3, 5 and 7 for a continuous drain current of 160 A at TC=25 °C.
7 S passive Source of the MOSFET, connected in parallel with pins 2, 3, 5 and 6 for a continuous drain current of 160 A at TC=25 °C.
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Triode/MOS Tube/Transistor
Pins 8

CAD (KiCad official)

  • Symbol: IPB039N10N3GATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: ipb039n10n3gatma1-etched.step / ipb039n10n3gatma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb039n10n3gatma1.step / ipb039n10n3gatma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 dd79f93b30cd56ad, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF