component
IPB025N10N3G
Public Made by Adomby adom
Tokmas MOSFETs, TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPB025N10N3G
Tokmas · MOSFETs · TO-263-7L
IPB025N10N3G from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V at TC = 25 ℃. |
| 2 | Source (S) | passive | Source terminal of the N-channel MOSFET, with drain-source breakdown voltage of at least 100 V. |
| 3 | Source (S) | passive | Source terminal of the N-channel MOSFET, with drain-source breakdown voltage of at least 100 V. |
| 4 | Drain (D) | passive | Drain terminal carrying up to 280 A DC at TC = 25 ℃ with VGS = 10 V, with drain-source voltage of 100 V. |
| 5 | Source (S) | passive | Source terminal of the N-channel MOSFET, with drain-source breakdown voltage of at least 100 V. |
| 6 | Source (S) | passive | Source terminal of the N-channel MOSFET, with drain-source breakdown voltage of at least 100 V. |
| 7 | Source (S) | passive | Source terminal of the N-channel MOSFET, with drain-source breakdown voltage of at least 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263-7L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TC = 25 ℃ | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 ℃ | 2 | |
| Drain Current (DC) | ID | 280 | A | TC = 25 ℃, VGS = 10 V | 2 | ||
| Drain Current (DC) | ID | 190 | A | TC = 100 ℃, VGS = 10 V | 2 | ||
| Drain Current (Pulsed) | IDM | 1200 | A | TC = 25 ℃, VGS = 10 V | 2 | ||
| Drain power dissipation | Ptot | 286 | W | TC = 25 ℃ | 2 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Continuous-Source Current | IS | 280 | A | TC = 25 ℃ | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 1750 | mJ | VDD=40V , L=0.1mH | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 32.8 | ℃/W | Surface Mounted on minimum footprint pad area | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 0.45 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0 V, IDS = 250 μA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, IDS = 250 μA | 3 | |
| Drain Leakage Current | IDSS | 1 | μA | VDS = 80 V, VGS = 0 V | 3 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = 0 V, VGS = ± 20 V | 3 | |
| On-State Resistance | RDS(ON) | 2.3 | mΩ | VGS = 10 V, IDS = 20 A | 3 | ||
| Diode Forward Voltage | VSD | 1.3 | V | ISD = 20 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
IPB025N10N3G - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin4 - 3D model: TO-263-7L (KiCad packages3D, STEP)
- 3D model files:
ipb025n10n3g-etched.step/ipb025n10n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb025n10n3g.step/ipb025n10n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (7 pp, sha256
4d2674573e954ebe, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).