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IPB019N08N5

Public Made by Adom

by adom

Tokmas MOSFETs, TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPB019N08N5

Tokmas · MOSFETs · TO-263-7L

IPB019N08N5 from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel enhancement-mode MOSFET; gate-source voltage is rated ±20 V at TC = 25 ℃.
2 Source (S) passive Source terminal; continuous source current is rated 220 A at TC = 25 ℃.
3 Source (S) passive Source terminal; continuous source current is rated 220 A at TC = 25 ℃.
4 D passive Drain terminal; drain-source voltage is rated 85 V minimum at TC = 25 ℃, and DC drain current is rated 220 A at VGS = 10 V.
5 Source (S) passive Source terminal; continuous source current is rated 220 A at TC = 25 ℃.
6 Source (S) passive Source terminal; continuous source current is rated 220 A at TC = 25 ℃.
7 Source (S) passive Source terminal; continuous source current is rated 220 A at TC = 25 ℃.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-263-7L
Category Transistors/Thyristors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V TC = 25 ℃ 2
Gate-Source Voltage VGS 20 V TC = 25 ℃ 2
Drain Current (DC) ID 220 A TC = 25 ℃, VGS = 10 V 2
Drain Current (DC) ID 156 A TC = 100 ℃, VGS = 10 V 2
Drain Current (Pulsed) IDM 800 A TC = 25 ℃, VGS = 10 V; see note * (pulse test) 2
Drain Power Dissipation Ptot 250 W TC = 25 ℃ 2
Storage Temperature Tstg -55 175 ℃ 2
Junction Temperature TJ 175 ℃ 2
Continuous-Source Current IS 220 A TC = 25 ℃ 2
Single Pulsed Avalanche Energy EAS 805 mJ VDD = 100 V, L = 0.1 mH 2
Thermal Resistance, Junction to Ambient RθJA 32 ℃/W Surface mounted on minimum footprint pad area (note **) 2
Thermal Resistance, Junction to Case RθJC 0.45 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 85 95 V VGS = 0 V, IDS = 250 μA 3
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, IDS = 250 μA 3
Drain Leakage Current IDSS 1 μA VDS = 85 V, VGS = 0 V 3
Drain Leakage Current IDSS 30 μA TJ = 85 ℃ 3
Gate Leakage Current IGSS 100 nA VGS = 0 V, VGS = ± 20 V 3
On-State Resistance RDS(ON) 2.4 2.8 mΩ VGS = 10 V, IDS = 30 A; pulse test 3
Diode Forward Voltage VSD 1.2 V ISD = 30 A, VGS = 0 V 3

CAD (KiCad official)

  • Symbol: IPB019N08N5
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin4
  • 3D model: TO-263-7L (KiCad packages3D, STEP)
  • 3D model files: ipb019n08n5-etched.step / ipb019n08n5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb019n08n5.step / ipb019n08n5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (7 pp, sha256 fc0bc8459f6e91c3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF