IPB019N08N3G

{
  "slug": "ipb019n08n3g",
  "version": "0.1.0",
  "type": "component",
  "description": "Tokmas MOSFETs, TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "IPB019N08N3G",
    "manufacturer": "Tokmas",
    "package": "TO-263-7L",
    "pin_count": 7,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/11889b8cfe74a36bfd1db54b10d96068.pdf",
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    "distributor_links": {
      "lcsc": "C21547645",
      "mouser": "726-IPB019N08N3G"
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    "distributor_check": {
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    "pins": [
      {
        "number": "1",
        "name": "Gate (G)",
        "type": "input",
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      },
      {
        "number": "2",
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      },
      {
        "number": "3",
        "name": "Source (S)",
        "type": "passive",
        "description": "Source terminal of the N-channel enhancement mode MOSFET, bonded in parallel with pins 2, 5, 6 and 7 and rated within the 85 V Drain-Source Voltage limit."
      },
      {
        "number": "4",
        "name": "Drain (D)",
        "type": "passive",
        "description": "Drain terminal of the N-channel enhancement mode MOSFET, rated for a Drain-Source Voltage of 85 V and a DC Drain Current of 220 A at TC = 25 ℃ (limited by bonding wire)."
      },
      {
        "number": "5",
        "name": "Source (S)",
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        "description": "Source terminal of the N-channel enhancement mode MOSFET, bonded in parallel with pins 2, 3, 6 and 7 and rated within the 85 V Drain-Source Voltage limit."
      },
      {
        "number": "6",
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