# IPB017N10N5LFATMA1

**Infineon Technologies** · MOSFETs · TO-263-7

IPB017N10N5LFATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the absolute gate-source voltage rating is -20 V to 20 V (Table 2, maximum ratings). |
| 2 | Source | passive | One of five source pins (2, 3, 5, 6, 7) that are tied together to carry the main source current; the datasheet gives no pin-specific limit for this pin. |
| 3 | Source | passive | One of five source pins (2, 3, 5, 6, 7) that are tied together to carry the main source current; the datasheet gives no pin-specific limit for this pin. |
| 4 | Drain | passive | Drain terminal, electrically the same node as the tab; the part is rated for VDS of 100 V and continuous drain current of 256 A at TC=25°C (Table 2). |
| 5 | Source | passive | One of five source pins (2, 3, 5, 6, 7) that are tied together to carry the main source current; the datasheet gives no pin-specific limit for this pin. |
| 6 | Source | passive | One of five source pins (2, 3, 5, 6, 7) that are tied together to carry the main source current; the datasheet gives no pin-specific limit for this pin. |
| 7 | Source | passive | One of five source pins (2, 3, 5, 6, 7) that are tied together to carry the main source current; the datasheet gives no pin-specific limit for this pin. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (VGS=10V, TC=25°C) | ID |  |  | 256 | A | VGS=10V,TC=25°C | 3 |
| Continuous drain current (VGS=10V, TC=100°C) | ID |  |  | 198 | A | VGS=10V,TC=100°C | 3 |
| Continuous drain current (VGS=10V, RthJA=40K/W) | ID |  |  | 31 | A | VGS=10V,TC=25°C,RthJA=40K/W | 3 |
| Pulsed drain current | ID,pulse |  |  | 1024 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 979 | mJ | ID=100A,RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Power dissipation | Ptot |  |  | 313 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -55 |  | 150 | °C |  | 3 |
| Thermal resistance, junction - case | RthJC |  | 0.25 | 0.4 | K/W |  | 3 |
| Thermal resistance, junction - ambient (minimal footprint) | RthJA |  |  | 62 | K/W | Device on PCB, minimal footprint | 3 |
| Thermal resistance, junction - ambient (6 cm² cooling area) | RthJA |  |  | 40 | K/W | Device on PCB, 6 cm² cooling area | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | VGS(th) | 2.5 | 3.3 | 4.1 | V | VDS=VGS,ID=270µA | 4 |
| Zero gate voltage drain current (Tj=25°C) | IDSS |  | 1 | 10 | µA | VDS=100V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current (Tj=125°C) | IDSS |  |  | 100 | µA | VDS=100V,VGS=0V,Tj=125°C | 4 |
| Gate-source leakage current (VGS=20V) | IGSS |  | 2 | 5 | µA | VGS=20V,VDS=0V | 4 |
| Gate-source leakage current (VGS=-10V) | IGSS |  | -2 | -5 | µA | VGS=-10V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 1.5 | 1.7 | mΩ | VGS=10V,ID=100A | 4 |
| Gate resistance | RG |  | 44 | 66 | Ω |  | 4 |
| Transconductance | gfs | 32 | 63 |  | S | /VDS/>2/ID/RDS(on)max,ID=100A | 4 |
| Input capacitance | Ciss |  | 650 | 840 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |
| Output capacitance | Coss |  | 1900 | 2500 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |
| Output charge | Qoss |  | 209 | 278 | nC | VDD=50V,VGS=0V | 4 |
| Diode continuous forward current | IS |  |  | 206 | A | TC=25°C | 5 |
| Diode pulse current | IS,pulse |  |  | 1024 | A | TC=25°C | 5 |
| Diode forward voltage | VSD |  | 0.86 | 1.2 | V | VGS=0V,IF=100A,Tj=25°C | 5 |

## CAD (KiCad official)

- Symbol: `IPB017N10N5LFATMA1`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin8`
- 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files: `ipb017n10n5lfatma1-etched.step` / `ipb017n10n5lfatma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipb017n10n5lfatma1.step` / `ipb017n10n5lfatma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590365122461413376) (11 pp, sha256 `08dc0bc383e45b96`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipb017n10n5lfatma1-datasheet.pdf)