# IPB015N08N5ATMA1

**Infineon Technologies** · MOSFETs · TO-263-7

IPB015N08N5ATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin; gate-source voltage limited to ±20 V with threshold VGS(th) of 2.2 V min to 3.8 V max. |
| 2 | Source | passive | Source pin, connected in parallel with pins 3, 5, 6 and 7 for the 260 A rated drain current path. |
| 3 | Source | passive | Source pin, connected in parallel with pins 2, 5, 6 and 7 for the 260 A rated drain current path. |
| 4 | Drain | passive | Drain pin, internally common with the tab; drain-source voltage rating of 80 V. |
| 5 | Source | passive | Source pin, connected in parallel with pins 2, 3, 6 and 7 for the 260 A rated drain current path. |
| 6 | Source | passive | Source pin, connected in parallel with pins 2, 3, 5 and 7 for the 260 A rated drain current path. |
| 7 | Source | passive | Source pin, connected in parallel with pins 2, 3, 5 and 6 for the 260 A rated drain current path. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 80 |  |  | V | VGS=0V, ID=1mA | 4 |
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=279µA | 4 |
| Zero gate voltage drain current | IDSS |  | 0.1 | 1 | µA | VDS=80V, VGS=0V, Tj=25°C | 4 |
| Zero gate voltage drain current | IDSS |  | 10 | 100 | µA | VDS=80V, VGS=0V, Tj=125°C | 4 |
| Gate-source leakage current | IGSS |  | 1 | 100 | nA | VGS=20V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 1.1 | 1.5 | mΩ | VGS=10V, ID=100A | 4 |
| Drain-source on-state resistance | RDS(on) |  | 1.5 | 1.8 | mΩ | VGS=6V, ID=50A | 4 |
| Gate resistance | RG |  | 1.5 | 2.3 | Ω |  | 4 |
| Transconductance | gfs | 123 | 245 |  | S | /VDS/>2/ID/RDS(on)max, ID=100A | 4 |
| Input capacitance | Ciss |  | 13000 | 16900 | pF | VGS=0V, VDS=40V, f=1MHz | 4 |
| Output capacitance | Coss |  | 2000 | 2600 | pF | VGS=0V, VDS=40V, f=1MHz | 4 |
| Reverse transfer capacitance | Crss |  | 86 | 150 | pF | VGS=0V, VDS=40V, f=1MHz | 4 |
| Gate to drain charge | Qgd |  | 37 | 56 | nC | VDD=40V, ID=100A, VGS=0to10V | 4 |
| Gate charge total | Qg |  | 178 | 222 | nC | VDD=40V, ID=100A, VGS=0to10V | 4 |
| Output charge | Qoss |  | 207 | 276 | nC | VDD=40V, VGS=0V | 4 |
| Diode continous forward current | IS |  |  | 202 | A | TC=25°C | 5 |
| Diode pulse current | IS,pulse |  |  | 1040 | A | TC=25°C | 5 |
| Diode forward voltage | VSD |  | 0.86 | 1.2 | V | VGS=0V, IF=100A, Tj=25°C | 5 |
| Reverse recovery time | trr |  | 94 | 188 | ns | VR=40V, IF=100A, diF/dt=100A/µs | 5 |
| Reverse recovery charge | Qrr |  | 246 | 492 | nC | VR=40V, IF=100A, diF/dt=100A/µs | 5 |
| Continuous drain current | ID |  |  | 260 | A | VGS=10V, TC=25°C | 3 |
| Continuous drain current | ID |  |  | 199 | A | VGS=10V, TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 1040 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 1230 | mJ | ID=100A, RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Power dissipation | Ptot |  |  | 375 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -55 |  | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 |
| Thermal resistance, junction - case | RthJC |  | 0.3 | 0.4 | K/W |  | 3 |
| Thermal resistance, junction - ambient, minimal footprint | RthJA |  |  | 62 | K/W |  | 3 |
| Thermal resistance, junction - ambient, 6 cm2 cooling area | RthJA |  |  | 40 | K/W |  | 3 |
| Soldering temperature | Tsold |  |  | 260 | °C | Reflow MSL1 | 3 |
| Turn-on delay time | td(on) |  | 33 |  | ns | VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 |
| Rise time | tr |  | 32 |  | ns | VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 |
| Turn-off delay time | td(off) |  | 83 |  | ns | VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 |
| Fall time | tf |  | 28 |  | ns | VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 |
| Gate to source charge | Qgs |  | 56 |  | nC | VDD=40V, ID=100A, VGS=0to10V | 4 |
| Switching charge | Qsw |  | 58 |  | nC | VDD=40V, ID=100A, VGS=0to10V | 4 |
| Gate plateau voltage | Vplateau |  | 4.5 |  | V | VDD=40V, ID=100A, VGS=0to10V | 4 |
| Gate charge total, sync. FET | Qg(sync) |  | 153 |  | nC | VDS=0.1V, VGS=0to10V | 4 |

## CAD (KiCad official)

- Symbol: `IPB015N08N5ATMA1`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin8`
- 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files: `ipb015n08n5atma1-etched.step` / `ipb015n08n5atma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipb015n08n5atma1.step` / `ipb015n08n5atma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96) (11 pp, sha256 `9310c82dc1a9a630`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipb015n08n5atma1-datasheet.pdf)