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IPA60R460CE
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Infineon Technologies MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPA60R460CE
Infineon Technologies · MOSFETs · TO-220FP
IPA60R460CE from Infineon Technologies, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with a static gate-source voltage limit of -20 V to 20 V and a dynamic limit of -30 V to 30 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a continuous drain current of 13.1 A at TC=25°C and a drain-source breakdown voltage V(BR)DSS of 600 V. |
| 3 | Source | passive | Source terminal of the MOSFET, serving as the reference for gate drive, with a continuous diode forward current of 9.3 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 13.1 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 8.3 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 26 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 185 | mJ | ID=1.6A; VDD=50V; see table 11 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.28 | mJ | ID=1.6A; VDD=50V; see table 11 | 3 | ||
| Avalanche current, repetitive | IAR | 1.6 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...480V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation (FullPAK) | Ptot | 30 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 9.3 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 26 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 500 | A/µs | VDS=0...400V, ISD<=IS, Tj=25°C | 3 | ||
| Mounting torque (FullPAK) | 50 | Ncm | M2.5 screws | 3 | |||
| Insulation withstand voltage for TO-220FP | VISO | 2500 | V | Vrms, TC=25°C, t=1min | 3 | ||
| Thermal resistance, junction - case (FullPAK) | RthJC | 4.1 | °C/W | 3 | |||
| Thermal resistance, junction - ambient (FullPAK) | RthJA | 80 | °C/W | leaded | 3 | ||
| Soldering temperature, wave soldering | Tsold | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V, ID=0.25mA | 5 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.28mA | 5 |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=600, VGS=0V, Tj=25°C | 5 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=600, VGS=0V, Tj=150°C | 5 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.41 | 0.46 | Ω | VGS=10V, ID=3.4A, Tj=25°C | 5 |
CAD (KiCad official)
- Symbol:
IPA60R460CE - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
b25c7785c794b88d, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPA60R460CE
**Infineon Technologies** · MOSFETs · TO-220FP
IPA60R460CE from Infineon Technologies, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with a static gate-source voltage limit of -20 V to 20 V and a dynamic limit of -30 V to 30 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a continuous drain current of 13.1 A at TC=25°C and a drain-source breakdown voltage V(BR)DSS of 600 V. |
| 3 | Source | passive | Source terminal of the MOSFET, serving as the reference for gate drive, with a continuous diode forward current of 9.3 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | 13.1 | A | TC=25°C | 3 |
| Continuous drain current | ID | | | 8.3 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse | | | 26 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 185 | mJ | ID=1.6A; VDD=50V; see table 11 | 3 |
| Avalanche energy, repetitive | EAR | | | 0.28 | mJ | ID=1.6A; VDD=50V; see table 11 | 3 |
| Avalanche current, repetitive | IAR | | | 1.6 | A | | 3 |
| MOSFET dv/dt ruggedness | dv/dt | | | 50 | V/ns | VDS=0...480V | 3 |
| Gate source voltage (static) | VGS | -20 | | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 | | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation (FullPAK) | Ptot | | | 30 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -40 | | 150 | °C | | 3 |
| Operating junction temperature | Tj | -40 | | 150 | °C | | 3 |
| Continuous diode forward current | IS | | | 9.3 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse | | | 26 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt | | | 15 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 3 |
| Maximum diode commutation speed | dif/dt | | | 500 | A/µs | VDS=0...400V, ISD<=IS, Tj=25°C | 3 |
| Mounting torque (FullPAK) | | | | 50 | Ncm | M2.5 screws | 3 |
| Insulation withstand voltage for TO-220FP | VISO | | | 2500 | V | Vrms, TC=25°C, t=1min | 3 |
| Thermal resistance, junction - case (FullPAK) | RthJC | | | 4.1 | °C/W | | 3 |
| Thermal resistance, junction - ambient (FullPAK) | RthJA | | | 80 | °C/W | leaded | 3 |
| Soldering temperature, wave soldering | Tsold | | | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS=0V, ID=0.25mA | 5 |
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.28mA | 5 |
| Zero gate voltage drain current | IDSS | | | 10 | µA | VDS=600, VGS=0V, Tj=25°C | 5 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=600, VGS=0V, Tj=150°C | 5 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) | | 0.41 | 0.46 | Ω | VGS=10V, ID=3.4A, Tj=25°C | 5 |
## CAD (KiCad official)
- Symbol: `IPA60R460CE`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/ipa60r460ce-datasheet.pdf) (16 pp, sha256 `b25c7785c794b88d`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipa60r460ce-datasheet.pdf)