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IPA60R120P7

Infineon Technologies · MOSFETs · TO-220F

IPA60R120P7 from Infineon Technologies, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; gate-source voltage is limited to ±20 V static and ±30 V dynamic (AC, f>1 Hz).
2 Drain passive Drain terminal of the MOSFET; rated at 600 V drain-source breakdown voltage (VGS=0 V, ID=1 mA) with 26 A continuous drain current at TC=25°C.
3 Source passive Source terminal of the MOSFET, with an internal body diode between drain and source; continuous diode forward current is 26 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 26 A TC=25°C 3
Continuous drain current ID 16 A TC=100°C 3
Pulsed drain current ID,pulse 78 A TC=25°C 3
Avalanche energy, single pulse EAS 82 mJ ID=5.0A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.41 mJ ID=5.0A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 5 A 3
MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 28 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 50 Ncm M2.5 screws 3
Continuous diode forward current IS 26 A TC=25°C 3
Diode pulse current IS,pulse 78 A TC=25°C 3
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V, ISD<=26A, Tj=25°C 3
Maximum diode commutation speed diF/dt 900 A/µs VDS=0...400V, ISD<=26A, Tj=25°C 3
Insulation withstand voltage VISO 2500 V Vrms, TC=25°C, t=1min 3
Thermal resistance, junction - case RthJC 4.49 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=1mA 5
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS, ID=0.41mA 5
Zero gate voltage drain current IDSS 10 µA VDS=600V, VGS=0V, Tj=25°C 5
Zero gate voltage drain current IDSS 1 µA VDS=600V, VGS=0V, Tj=150°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 0.1 0.12 Ω VGS=10V, ID=8.2A, Tj=25°C 5
Drain-source on-state resistance RDS(on) 0.234 Ω VGS=10V, ID=8.2A, Tj=150°C 5
Gate resistance RG 7 Ω f=1MHz, open drain 5

CAD (KiCad official)

  • Symbol: IPA60R120P7
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 172130932e0737e3, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF