# IPA60R080P7

**Infineon Technologies** · MOSFETs · TO-220F

IPA60R080P7 from Infineon Technologies, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the MOSFET; the datasheet limits the static gate-source voltage to ±20 V and the dynamic (AC, f>1 Hz) gate-source voltage to ±30 V. |
| 2 | Drain | passive | Drain of the MOSFET, rated for 600 V minimum drain-source breakdown voltage V(BR)DSS and 37 A continuous drain current at TC=25°C. |
| 3 | Source | passive | Source of the MOSFET, which is the reference terminal for the gate-source voltage; the internal body diode runs between drain and source with a continuous forward current rating of 37 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 37 | A | TC=25°C | 3 |
| Continuous drain current | ID |  |  | 23 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 110 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 118 | mJ | ID=5.5A; VDD=50V; see table 10 | 3 |
| Avalanche energy, repetitive | EAR |  |  | 0.58 | mJ | ID=5.5A; VDD=50V; see table 10 | 3 |
| Avalanche current, single pulse | IAS |  |  | 5.5 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 80 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot |  |  | 29 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Operating junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| Mounting torque |  |  |  | 50 | Ncm | M2.5 screws | 3 |
| Continuous diode forward current | IS |  |  | 37 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 110 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 50 | V/ns | VDS=0...400V,ISD<=37A,Tj=25°C | 3 |
| Maximum diode commutation speed | diF/dt |  |  | 900 | A/µs | VDS=0...400V,ISD<=37A,Tj=25°C | 3 |
| Insulation withstand voltage | VISO |  |  | 2500 | V | Vrms,TC=25°C,t=1min | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 4.28 | °C/W |  | 4 |
| Thermal resistance, junction - ambient (leaded) | RthJA |  |  | 62 | °C/W | leaded | 4 |
| Soldering temperature, wavesoldering | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS=0V,ID=1mA | 5 |
| Gate threshold voltage | V(GS)th | 3 | 3.5 | 4 | V | VDS=VGS,ID=0.59mA | 5 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS=600V,VGS=0V,Tj=25°C | 5 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V,VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.069 | 0.08 | Ω | VGS=10V,ID=11.8A,Tj=25°C | 5 |

## CAD (KiCad official)

- Symbol: `IPA60R080P7`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipa60r080p7-datasheet.pdf) (14 pp, sha256 `5b24d3cc84d730e2`, retrieved 2026-11-07, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipa60r080p7-datasheet.pdf)