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INN650DA04

Public Made by Adom

by adom

Innoscience JFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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INN650DA04

Innoscience · JFETs · DFN-8(5x6)

INN650DA04 from Innoscience, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain power_out Drain connection (1 of 4); rated for VDS,max = 650V and VDS(transient) = 750V for non-repetitive surge events.
2 Drain power_out Drain connection (2 of 4); rated for VDS,max = 650V and VDS(transient) = 750V for non-repetitive surge events.
3 Drain power_out Drain connection (3 of 4); rated for VDS,max = 650V and VDS(transient) = 750V for non-repetitive surge events.
4 Drain power_out Drain connection (4 of 4); rated for VDS,max = 650V and VDS(transient) = 750V for non-repetitive surge events.
5 Source power_in Source return terminal (1 of 2); serves as main return path for drain current and voltage reference for gate circuit.
6 Source power_in Source return terminal (2 of 2); serves as main return path for drain current and voltage reference for gate circuit.
7 Kelvin Source passive Kelvin source connection; separate source terminal for gate driver voltage feedback sensing to provide lower-impedance reference.
8 Gate input Gate control input; accepts VGS from -1.4V to +7V (continuous) or -20V to +10V (pulsed) with typical gate charge QG = 0.9nC.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Innoscience
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain source voltage VDS,max 650 V VGS = 0 V, ID = 10 μA 3
Drain source voltage transient VDS(transient) 750 V VGS = 0 V, VDS = 750 V 3
Continuous current, drain source ID 7 A Tc = 25 °C 3
Pulsed current, drain source ID,pulse 11 A Tc = 25 °C; VG = 6 V; See Figure 16; 3
Pulsed current, drain source ID,Pulse 6 A Tc = 125 °C;VG = 6 V; See Figure 17; 3
Gate source voltage, continuous VGS -1.4 7 V Tj = -55 °C to 150 °C 3
Gate source voltage, pulsed VGS,pulse -20 10 V Tj = -55 °C to 150 °C; tPulse = 50 ns, f = 100 kHz 3
Power dissipation Ptot 39 W Tc = 25 °C 3
Operating temperature Tj -55 150 ˚C 3
Storage temperature Tstg -55 150 ˚C 3
Thermal resistance, junction-case RthJC 3.2 °C/W 4
Reflow soldering temperature Tsold 260 °C MSL3 4
Gate threshold voltage VGS(TH) 1.2 1.6 2.2 V ID = 5.2 mA; VDS = VGS; Tj = 25 °C 5
Drain-source leakage current IDSS 0.4 10 µA VDS = 650 V; VGS = 0 V; Tj = 25 °C 5
Drain-source leakage current IDSS 5 80 µA VDS = 650 V; VGS = 0 V; Tj = 150 °C 5
Drain-source on-state resistance RDS(on) 365 480 mΩ VGS = 6 V; ID = 2 A; Tj = 25 °C 5
Pulsed current, reverse IS,pulse 11 A VG = 6 V 6

CAD (KiCad official)

  • Symbol: INN650DA04
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: inn650da04-etched.step / inn650da04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); inn650da04.step / inn650da04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Innoscience datasheet (15 pp, sha256 8d1e2862fb27fafb, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF