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INA299A1IDBVR

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Texas Instruments , SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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INA299A1IDBVR

Texas Instruments · IC · SOT-23-6

INA299A1IDBVR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT output Output voltage, which can swing from as low as 80mV to as high as 100mV below the supply voltage and is limited to GND - 0.3V to VS + 0.3V.
2 GND power_in Ground.
3 IN+ input Current-sense amplifier positive input; for high-side applications connect to bus-voltage side of sense resistor, for low-side applications connect to load side, with common-mode range of -2V to 80V.
4 IN- input Current-sense amplifier negative input; for high-side applications connect to load side of sense resistor, for low-side applications connect to ground side, with common-mode range of -2V to 80V.
5 REF input Reference voltage input; connect to a voltage potential from 0V to VS to set the output at zero differential input.
6 VS power_in Power supply, 2.7V to 12V (absolute maximum 13.2V relative to GND).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-6
Category
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VS -0.3 13.2 V VS - GND 3
Differential analog input VIN+ - VIN- -6 6 V (VIN+) - (VIN-) 3
Common-mode analog input VIN+, VIN- -12 85 V Common-mode 3
Operating temperature TA -55 150 °C 3
Junction temperature TJ 150 °C 3
Storage temperature Tstg -65 150 °C 3
ESD HBM V(ESD) -2000 2000 V Human body model, all pins 3
ESD CDM V(ESD) -1000 1000 V Charged device model, all pins 3
Common-mode input range VCM -2 48 80 V 3
Operating supply range VS 2.7 5 12 V 3
Differential sense input range VSENSE 0 V max printed as VS / G 3
Ambient temperature TA -40 125 °C 3
Junction-to-ambient thermal resistance RθJA 158.8 °C/W DBV (SOT-23), 6 pins 3
Junction-to-case (top) thermal resistance RθJC(top) 76.9 °C/W 3
Junction-to-board thermal resistance RθJB 41.4 °C/W 3
Junction-to-top characterization parameter ΨJT 17.3 °C/W 3
Junction-to-board characterization parameter ΨJB 41.1 °C/W 3
Common-mode input range VCM -2 80 V TA = -40°C to +125°C 4
Common-mode rejection ratio, input referred CMRR 110 120 dB 2.5V < VCM < 80V 4
Common-mode rejection ratio, input referred CMRR 80 90 dB 0V < VCM < 80V 4
Common-mode rejection ratio, input referred CMRR 65 dB -2V < VCM ≤ 2.5V 4
Offset voltage, input referred Vos -150 150 µV VCM = 2.5V 4
Offset voltage, input referred Vos -200 200 µV VCM = 2.5V, TA = -40°C to +125°C 4
Offset voltage drift dVos/dT 0.5 µV/℃ VCM = 2.5V; printed ±0.5 4
Power supply rejection ratio, input referred PSRR -6 6 µV/V VCM = 2.5V, 2.7V ≤ VS ≤ 12V, VREF = 1V, TA = -40°C to +125°C 4
Input bias current IB -21 13 21 µA IB+, IB-, VCM = 2.5V, VSENSE = 0V 4
Input bias current IB -28 28 µA IB+, IB-, VCM = 2.5V, VSENSE = 0V, TA = -40°C to +125°C 4
Reference input range 0 5 V 0 to VS (VS = 5V) 4
Reference voltage rejection ratio, input referred RVRR -20 5 20 µV/V VREF= 0.5V to 4.5V, TA = -40°C to +125°C 4
Gain (INA299A1) G 20 V/V INA299A1 4
Gain error GERR -0.25 0.25 % VCM = 2.5V, (GND + 50mV) < VOUT < (VS - 200mV) 4
Gain error drift 10 ppm/°C VCM = 2.5V, TA = -40°C to +125°C, (GND + 50mV) < VOUT < (VS - 200mV) 4
Nonlinearity error NLERR 0.01 % VOUT = 0.5V to 4.5V, VCM = 12V 4
Maximum capacitive load 500 pF No sustained oscillations, no isolation resistor 4
Swing to VS (power supply rail) 4.9 V VCM = 2.5V, RL = 10kΩ to GND 4
Swing to ground 80 mV VCM = 2.5V, RL = 10kΩ to GND 4
Bandwidth BW 650 kHz INA299A1 4
Settling time to 1% 6.5 µs VOUT = 0.5V to 4.5V step, Output settles to 1% 5
Settling time to 5% 3 µs VOUT = 0.5V to 4.5V step, Output settles to 5% 5
Slew rate SR 2.5 V/µs INA299A1, VSENSE = ±100mV 5
Voltage noise density Ven 117 nV/√Hz f > 10kHz 5
Quiescent current IQ 450 600 µA VCM = 2.5V 5
Quiescent current IQ 650 µA VCM = 2.5V, TA = -40°C to +125°C 5
Quiescent current IQ 950 1100 µA VCM = -2V 5
Quiescent current IQ 1200 µA VCM = -2V, TA = -40°C to +125°C 5
Specified temperature range TA -40 125 °C 5

CAD (KiCad official)

  • Symbol: INA299A1IDBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: ina299a1idbvr-etched.step / ina299a1idbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina299a1idbvr.step / ina299a1idbvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (28 pp, sha256 917b44053500f5cd, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF