component
INA283AQDRQ1
Public Made by Adomby adom
Texas Instruments Current-Sensing Amplifiers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownINA283AQDRQ1
Texas Instruments · Current-Sensing Amplifiers · SOIC-8
INA283AQDRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | -IN | input | Connection to the negative side of the shunt resistor. |
| 2 | GND | power_in | Analog ground. |
| 3 | REF2 | input | Reference voltage input, 0 V to V+; see the Reference Pin Connection Options section for connection options. |
| 4 | NC | unconnected | Not internally connected; the pin should be left floating or connected to GND. |
| 5 | OUT | output | Analog output voltage. |
| 6 | V+ | power_in | Analog power supply, 2.7 V to 18 V. |
| 7 | REF1 | input | Reference voltage input, 0 V to V+; see the Reference Pin Connection Options section for connection options. |
| 8 | +IN | input | Connection to the positive side of the shunt resistor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Amplifiers |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Offset voltage, RTI | VOS | -70 | 20 | 70 | µV | VSENSE = 0 mV | 5 |
| Offset voltage drift vs temperature | dVOS/dT | -1.5 | 0.3 | 1.5 | µV/°C | TA = -40°C to 125°C | 5 |
| Common-mode rejection | CMRR | 120 | 140 | dB | V+IN = -14 V to 80 V, VSENSE = 0 mV; TA = -40°C to 125°C | 5 | |
| Common-mode input range | VCM | -14 | 80 | V | TA = -40°C to 125°C | 5 | |
| Reference input voltage range (max printed as VGND + 9 V) | VREF | 0 | 9 | V | Referenced to GND; max = VGND + 9 V | 5 | |
| Reference divider accuracy | -0.5 | 0.2 | 0.5 | % | 5 | ||
| Reference voltage rejection ratio, INA283-Q1 | RVRR | -30 | 13 | 30 | µV/V | VREF1 = VREF2 = 40 mV to 9 V, V+ = 18 V | 5 |
| Gain error, INA283-Q1 | -1.4 | 0.4 | 1.4 | % | 5 | ||
| Gain drift | 0.0008 | 0.005 | %/°C | TA = -40°C to 125°C | 5 | ||
| Nonlinearity error | -0.01 | 0.01 | % | 6 | |||
| Maximum capacitive load | CLOAD | 1 | nF | No sustained oscillation | 6 | ||
| Output swing to V+ rail (printed as (V+), value; values are offsets from V+) | VOUT | -0.17 | -0.4 | V | V+ = 5 V, RLOAD = 10 kΩ to GND; TA = -40°C to 125°C | 6 | |
| Output swing to GND rail (printed as GND + value) | VOUT | 0.015 | 0.04 | V | TA = -40°C to 125°C | 6 | |
| Specified supply voltage range | VS | 2.7 | 18 | V | TA = -40°C to 125°C | 6 | |
| Quiescent current | IQ | 600 | 900 | µA | 6 | ||
| Specified temperature range | TA | -40 | 125 | °C | 6 | ||
| Supply voltage, V+ | V+ | 18 | V | 4 | |||
| Differential input voltage (V+IN), (V-IN) | VSENSE | -5 | 5 | V | Analog inputs V+IN, V-IN | 4 | |
| Common-mode voltage | VCM | -14 | 80 | V | V+IN and V-IN voltages | 4 | |
| REF1, REF2, OUT voltage (min relative to GND, max relative to V+) | -0.3 | 0.3 | V | min = GND, 0.3 V; max = (V+) + 0.3 V | 4 | ||
| Input current into any pin | 5 | mA | 4 | ||||
| Junction temperature | TJ | 150 | °C | 4 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Common-mode input voltage | VCM | 12 | V | 4 | |||
| Operating supply voltage | V+ | 5 | V | 4 | |||
| Operating free-air temperature | TA | -40 | 125 | °C | 4 | ||
| Junction-to-ambient thermal resistance (SOIC, D) | RθJA | 134.9 | °C/W | D (SOIC) package | 4 | ||
| Junction-to-case (top) thermal resistance (SOIC, D) | RθJC(top) | 72.9 | °C/W | D (SOIC) package | 4 | ||
| Junction-to-board thermal resistance (SOIC, D) | RθJB | 61.3 | °C/W | D (SOIC) package | 4 | ||
| Junction-to-top characterization parameter (SOIC, D) | ψJT | 18.9 | °C/W | D (SOIC) package | 4 | ||
| Junction-to-board characterization parameter (SOIC, D) | ψJB | 54.3 | °C/W | D (SOIC) package | 4 |
CAD (KiCad official)
- Symbol:
INA283AQDRQ1 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ina283aqdrq1-etched.step/ina283aqdrq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ina283aqdrq1.step/ina283aqdrq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (36 pp, sha256
ca9aaf921ffbec36, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).