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INA241A5IDR

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TEXAS INSTRUMENTS Global Sourcing Parts, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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INA241A5IDR

TEXAS INSTRUMENTS · Global Sourcing Parts · SOIC-8

INA241A5IDR from TEXAS INSTRUMENTS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN- input Current-sense amplifier negative input; connect to load side of sense resistor for high-side applications or ground side of sense resistor for low-side applications.
2 GND power_in Ground.
3 REF2 input Reference 2 voltage input; connect to a voltage potential from 0V to VS.
4 NC unconnected Reserved pin that the datasheet says to connect to ground (absolute maximum input range GND − 0.3V to VS + 0.3V).
5 OUT output Output voltage.
6 VS power_in Power supply, 2.7V to 20V.
7 REF1 input Reference 1 voltage input; connect to a voltage potential from 0V to VS.
8 IN+ input Current-sense amplifier positive input; connect to bus-voltage side of sense resistor for high-side applications or load side of sense resistor for low-side applications.

Key specifications

Parameter Value
Manufacturer TEXAS INSTRUMENTS
Package SOIC-8
Category Global Sourcing Parts
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VS 22 V 4
Differential input voltage VIN+ − VIN− -30 30 V 4
Common-mode input voltage -20 120 V Analog inputs VIN+, VIN- 4
Operating temperature TA -55 150 °C 4
Junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
ESD HBM V(ESD) -2000 2000 V Human body model, all pins 4
ESD CDM V(ESD) -1000 1000 V Charged device model, all pins 4
Common-mode input range VCM -5 48 110 V 4
Operating supply range VS 2.7 5 20 V 4
Ambient temperature TA -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 122.9 °C/W D (SOIC) 8 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 54.7 °C/W D (SOIC) 8 pins 4
Junction-to-board thermal resistance RθJB 68.8 °C/W D (SOIC) 8 pins 4
Junction-to-top characterization parameter ΨJT 12.2 °C/W D (SOIC) 8 pins 4
Junction-to-board characterization parameter ΨJB 67.5 °C/W D (SOIC) 8 pins 4
Common-mode input range VCM -5 110 V VIN+, VIN- = -5V to 110V, VSENSE = 0mV, TA = -40°C to 125°C 5
Common-mode rejection ratio, input-referred CMRR 150 166 dB VIN+, VIN- = -5V to 110V, VSENSE = 0mV, TA = -40°C to 125°C, INA241A 5
Common-mode rejection ratio, input-referred CMRR 105 dB f = 50kHz 5
Offset voltage, input-referred Vos -8 2 8 µV VSENSE = 0mV, INA241A5 5
Offset voltage drift, input-referred dVos/dT -100 20 100 nV/°C TA = -40°C to 125°C, INA241A3, INA241A4, INA241A5 5
Power-supply rejection ratio, input-referred PSRR -0.5 0.06 0.5 µV/V VS = 2.7V to 20V, VSENSE = 0mV, VREF1 = VREF2 = 1V, TA = -40°C to 125°C, INA241A3, INA241A4, INA241A5 5
Input bias current IB 25 35 45 µA IB+, IB-, VSENSE=0mV 5
Gain G 200 V/V A5, B5 Devices 5
Gain error GERR -0.015 0.003 0.015 % (GND + 50mV) < VOUT < (VS - 200mV), INA241A4, INA241A5 6
Gain error drift -2 0.1 2 ppm/°C TA = -40°C to +125°C, INA241A4, INA241A5 6
Non-linearity error 0.001 % 6
Maximum capacitive load 1 nF No sustained oscillations, No isolation resistor 6
Swing to ground 8 20 mV RL = 10kΩ to GND, VSENSE = 0mV, VREF1 = VREF2 = 0V, TA = -40°C to +125°C 6
Reference voltage rejection ratio, input-referred RVRR -1.5 0.5 1.5 µV/V VREF1 = VREF2 = 0.5V to 4.5V, TA = -40°C to +125°C, INA241A2, INA241A3, INA241A4, INA241A5 6
Reference divider accuracy -0.01 0.002 0.01 % VOUT = /(VREF1 + VREF2)/ / 2 at VSENSE =0mV, VREF1 = VS, VREF2 = GND; VREF1 = GND, VREF2 = VS; TA = -40°C to +125°C, INA241A3, INA241A4, INA241A5 6
Bandwidth BW 1.1 MHz All Gains, −3dB Bandwidth 6
Settling time to 0.5% 1.5 µs VIN+, VIN- = 48V, VOUT = 0.5V to 4.5V, Output settles to 0.5% 6
Settling time to 1% 1 µs VIN+, VIN- = 48V, VOUT = 0.5V to 4.5V, Output settles to 1% 6
Settling time to 5% 0.5 µs VIN+, VIN- = 48V, VOUT = 0.5V to 4.5V, Output settles to 5% 6
Slew rate SR 8 V/µs Rising 6
Voltage noise density 28 nV/√Hz A5, B5 Devices 7
Supply voltage VS 2.7 20 V 7
Quiescent current IQ 2.5 3 mA VSENSE = 0mV 7
Quiescent current IQ 3.2 mA VSENSE = 0mV, TA = -40°C to +125°C 7
Specified temperature range TA -40 125 °C 7

CAD (KiCad official)

  • Symbol: INA241A5IDR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ina241a5idr-etched.step / ina241a5idr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina241a5idr.step / ina241a5idr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TEXAS INSTRUMENTS datasheet (44 pp, sha256 d0f0d3a73c1bc2b4, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF