# INA241A2QDRQ1

**Texas Instruments** · Current Sense Amplifiers · SOIC-8

INA241A2QDRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN- | input | Current-sense amplifier negative input; for high-side use connect to the load side of the sense resistor, and for low-side use connect to the ground side of the sense resistor. Common-mode input range is -5 V to 110 V. |
| 2 | GND | power_in | Device ground reference pin. |
| 3 | REF2 | input | Reference 2 voltage input, rated from 0 V to VS; it operates identically to REF1 and sets the output offset together with it. |
| 4 | NC | unconnected | Reserved pin that must be connected to ground. |
| 5 | OUT | output | Amplified output voltage of the current-sense amplifier. |
| 6 | VS | power_in | Power supply input, 2.7 V to 20 V. |
| 7 | REF1 | input | Reference 1 voltage input, rated from 0 V to VS; it operates identically to REF2 and sets the output offset together with it. |
| 8 | IN+ | input | Current-sense amplifier positive input; for high-side use connect to the bus-voltage side of the sense resistor, and for low-side use connect to the load side of the sense resistor. Common-mode input range is -5 V to 110 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Common-mode input range (operating) | VCM | -5 | 48 | 110 | V |  | 4 |
| Supply voltage (operating) | VS | 2.7 | 5 | 20 | V |  | 4 |
| Ambient temperature (operating) | TA | -40 |  | 125 | °C |  | 4 |
| Supply voltage absolute maximum | VS |  |  | 22 | V |  | 4 |
| Differential input voltage | (VIN+)-(VIN-) | -30 |  | 30 | V |  | 4 |
| Common-mode input voltage absolute | VIN+, VIN- | -20 |  | 120 | V |  | 4 |
| Operating temperature absolute | TA | -55 |  | 150 | °C |  | 4 |
| Junction temperature absolute | TJ |  |  | 150 | °C |  | 4 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 4 |
| Common-mode input range | VCM | -5 |  | 110 | V | VIN+, VIN- = -5 V to 110 V, VSENSE = 0 mV, TA = -40°C to 125°C | 5 |
| CMRR, referred to input (INA241A-Q1) | CMRR | 150 | 166 |  | dB | VIN+, VIN- = -5 V to 110 V, VSENSE = 0 mV, TA = -40°C to 125°C, INA241A-Q1 | 5 |
| Input offset voltage, referred to input | Vos | -15 | 3 | 15 | µV | VSENSE = 0 mV, INA241A2-Q1 | 5 |
| Input offset voltage drift, referred to input | dVos/dT | -150 | 30 | 150 | nV/°C | TA = -40°C to 125°C, INA241A2-Q1 | 5 |
| Power-supply rejection ratio, referred to input | PSRR | -0.75 | 0.1 | 0.75 | µV/V | VS = 2.7 V to 20 V, VSENSE = 0 mV, VREF1 = VREF2 = 1 V, TA = -40°C to 125°C, INA241A2-Q1 | 5 |
| Input bias current | IB | 25 | 35 | 45 | µA | IB+, IB-, VSENSE = 0 mV | 6 |
| Gain error | GERR | -0.01 | 0.002 | 0.01 | % | (GND + 50 mV) < VOUT < (VS, 200 mV), INA241A1-Q1, INA241A2-Q1, INA241A3-Q1 | 6 |
| Gain error drift | GERR drift | -1 | 0.05 | 1 | ppm/°C | TA = -40°C to +125°C, INA241A1-Q1, INA241A2-Q1, INA241A3-Q1 | 6 |
| Maximum capacitive load | CLOAD |  |  | 1 | nF | No sustained oscillation, no isolation resistor | 6 |
| Output swing to GND |  |  | 8 | 20 | mV | RL = 10 kΩ to GND, VSENSE = 0 mV, VREF1 = VREF2 = 0 V, TA = -40°C to +125°C | 6 |
| Reference input range |  | 0 |  |  | V |  | 6 |
| Gain (A2 device) | G |  | 20 |  | V/V | A2 device | 5 |
| Thermal resistance, junction-to-ambient (D, SOIC-8) | RθJA |  | 122.9 |  | °C/W |  | 4 |
| Thermal resistance, junction-to-case top (D, SOIC-8) | RθJC(top) |  | 54.7 |  | °C/W |  | 4 |
| Thermal resistance, junction-to-board (D, SOIC-8) | RθJB |  | 68.8 |  | °C/W |  | 4 |
| Junction-to-top characterization (D, SOIC-8) | ΨJT |  | 12.2 |  | °C/W |  | 4 |
| Junction-to-board characterization (D, SOIC-8) | ΨJB |  | 67.5 |  | °C/W |  | 4 |

## CAD (KiCad official)

- Symbol: `INA241A2QDRQ1`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ina241a2qdrq1-etched.step` / `ina241a2qdrq1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ina241a2qdrq1.step` / `ina241a2qdrq1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com.cn/cn/lit/ds/symlink/ina241a-q1.pdf) (49 pp, sha256 `f47e70b46c6401e5`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ina241a2qdrq1-datasheet.pdf)