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INA241A2IDR

Texas Instruments · Current Sense Amplifiers · SOIC-8

INA241A2IDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN- input Current-sense amplifier negative input; connect to load side of the sense resistor for high-side applications or ground side for low-side applications, with common-mode range −5V to 110V (survival −20V to 120V).
2 GND power_in Ground.
3 REF2 input Reference 2 voltage input; connect to a potential from 0V to VS, with no operational difference from REF1 and the output set at the midpoint of REF1 and REF2 at 0V input.
4 NC unconnected Reserved pin that the datasheet says to connect to ground.
5 OUT output Output voltage, bound between GND − 0.3V and VS + 0.3V (absolute maximum).
6 VS power_in Power supply, 2.7V to 20V operating (22V absolute maximum).
7 REF1 input Reference 1 voltage input; connect to a potential from 0V to VS, with no operational difference from REF2.
8 IN+ input Current-sense amplifier positive input; connect to bus-voltage side of the sense resistor for high-side applications or load side for low-side applications, with common-mode range −5V to 110V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (absolute max) VS 22 V 4
Differential input voltage VIN+ − VIN- -30 30 V (VIN+) − (VIN-) 4
Common-mode input voltage (absolute max) VCM -20 120 V Analog inputs VIN+, VIN- 4
Operating temperature (absolute max) TA -55 150 °C 4
Junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
ESD HBM V(ESD) -2000 2000 V HBM, ANSI/ESDA/JEDEC JS-001, all pins 4
ESD CDM V(ESD) -1000 1000 V CDM, ANSI/ESDA/JEDEC JS-002, all pins 4
Common-mode input range (recommended) VCM -5 48 110 V 4
Operating supply range VS 2.7 5 20 V 4
Ambient temperature TA -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 122.9 °C/W D (SOIC) 8 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 54.7 °C/W D (SOIC) 8 pins 4
Junction-to-board thermal resistance RθJB 68.8 °C/W D (SOIC) 8 pins 4
Junction-to-top characterization parameter ΨJT 12.2 °C/W D (SOIC) 8 pins 4
Junction-to-board characterization parameter ΨJB 67.5 °C/W D (SOIC) 8 pins 4
Common-mode input range VCM -5 110 V VIN+, VIN- = -5V to 110V, VSENSE = 0mV, TA = -40°C to 125°C 5
Common-mode rejection ratio, input-referred CMRR 150 166 dB VIN+, VIN- = -5V to 110V, VSENSE = 0mV, TA = -40°C to 125°C, INA241A 5
Common-mode rejection ratio at 50kHz CMRR 105 dB f = 50kHz 5
Offset voltage, input-referred Vos -15 3 15 µV VSENSE = 0mV, INA241A2 5
Offset voltage drift, input-referred dVos/dT -150 30 150 nV/°C TA = -40°C to 125°C, INA241A2 5
Power-supply rejection ratio, input-referred PSRR -0.75 0.1 0.75 µV/V VS = 2.7V to 20V, VSENSE = 0mV, VREF1 = VREF2 = 1V, TA = -40°C to 125°C, INA241A2 5
Input bias current IB 25 35 45 µA IB+, IB-, VSENSE=0mV 5
Gain G 20 V/V A2, B2 Devices 5
Gain error GERR -0.01 0.002 0.01 % (GND + 50mV) < VOUT < (VS - 200mV), INA241A2 6
Gain error drift -1 0.05 1 ppm/°C TA = -40°C to +125°C, INA241A2 6
Non-linearity error 0.001 % 6
Maximum capacitive load 1 nF No sustained oscillations, No isolation resistor 6
Swing to VS power supply rail (offset from VS) -0.07 -0.2 V RL = 10kΩ to GND, TA = -40°C to +125°C; printed VS − 0.07 / VS − 0.2 6
Swing to ground 8 20 mV RL = 10kΩ to GND, VSENSE = 0mV, VREF1 = VREF2 = 0V, TA = -40°C to +125°C 6
Reference voltage rejection ratio, input-referred RVRR -1.5 0.5 1.5 µV/V VREF1 = VREF2 = 0.5V to 4.5V, TA = -40°C to +125°C, INA241A2 6
Reference divider accuracy -0.005 0.002 0.005 % VOUT = /(VREF1 + VREF2)/ / 2 at VSENSE =0mV, TA = -40°C to +125°C, INA241A2 6
Bandwidth BW 1.1 MHz All Gains, −3dB Bandwidth 6
Settling time to 0.5% 1.5 µs VIN+, VIN- = 48V, VOUT = 0.5V to 4.5V, Output settles to 0.5% 6
Settling time to 1% 1 µs VIN+, VIN- = 48V, VOUT = 0.5V to 4.5V, Output settles to 1% 6
Settling time to 5% 0.5 µs VIN+, VIN- = 48V, VOUT = 0.5V to 4.5V, Output settles to 5% 6
Slew rate SR 8 V/µs Rising 6
Voltage noise density 49 nV/√Hz A2, B2 Devices 7
Supply voltage VS 2.7 20 V 7
Quiescent current IQ 2.5 3 mA VSENSE = 0mV 7
Quiescent current over temperature IQ 3.2 mA VSENSE = 0mV, TA = -40°C to +125°C 7
Specified temperature range TA -40 125 °C 7

CAD (KiCad official)

  • Symbol: INA241A2IDR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ina241a2idr-etched.step / ina241a2idr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina241a2idr.step / ina241a2idr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (44 pp, sha256 d0f0d3a73c1bc2b4, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF