component

INA180A2IDBVR

Public Made by Adom

by adom

Texas Instruments Current-Sensing Amplifiers, SOT-23-5. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componentop-amp-cmpina180a2idbvr
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

INA180A2IDBVR

Texas Instruments · Current-Sensing Amplifiers · SOT-23-5

INA180A2IDBVR from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT output Analog output voltage. OUT = Gain x (V(IN+) - V(IN-)), Gain = 50 V/V for the A2 device. Swings from ~(GND+0.5 mV) to ~(VS-0.02 V) with a 10 kΩ load.
2 GND power_in Device ground reference (0 V).
3 IN+ input Current-sense amplifier positive input. For high-side sensing, connect to the bus-voltage side of the sense resistor; for low-side sensing, connect to the load side of the sense resistor. Common-mode range -0.2 V to +26 V, independent of VS.
4 IN- input Current-sense amplifier negative input. For high-side sensing, connect to the load side of the sense resistor; for low-side sensing, connect to the ground side. Common-mode range -0.2 V to +26 V. Differential
5 VS power_in Positive supply, 2.7 V to 5.5 V (absolute max 6 V). Bypass to GND with a 0.1 µF ceramic capacitor placed close to the pin.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-5
Category Op-amp/Cmp
Pins 5

Ordering variants

Same part, different packaging or reel option.

  • INA180A2IDBVR
  • INA180A2IDBVT
  • INA180A2IDBVRIDGKR
  • INA180A2IDBVRIDGKT
  • INA180A2IDBVRIPWR
  • INA180A2IDBVRIPWT

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating supply voltage VS 2.7 5 5.5 V 6
Common-mode input voltage (IN+ and IN–) VCM -0.2 12 26 V 6
Operating free-air temperature TA -40 125 °C 6
Supply voltage VS 6 V 6
Analog inputs, differential -26 26 V Differential (VIN+) – (VIN–) 6
Analog inputs, common-mode 26 V Common-mode 6
Maximum output current IOUT 8 mA 6
Operating free-air temperature TA -55 150 °C 6
Junction temperature TJ 150 °C 6
Storage temperature Tstg -65 150 °C 6
Electrostatic discharge, human-body model (HBM) V(ESD) -3000 3000 V Per ANSI/ESDA/JEDEC JS-001 6
Electrostatic discharge, charged-device model (CDM) V(ESD) -1000 1000 V Per JEDEC specification JESD22-C101 6
Common-mode rejection ratio, RTI CMRR 84 100 dB VIN+ = 0 V to 26 V, VSENSE = 10 mV, TA = –40°C to +125°C 7
Offset voltage, RTI VOS -500 100 500 µV 7
Offset voltage, RTI VOS -150 25 150 µV VIN+ = 0 V 7
Offset drift, RTI dVOS/dT 0.2 1 µV/°C TA = –40°C to +125°C 7
Power-supply rejection ratio, RTI PSRR -40 8 40 µV/V VS = 2.7 V to 5.5 V, VSENSE = 10 mV 7
Input offset current IIO -0.05 0.05 µA VSENSE = 0 mV 7
Gain error EG -1 0.1 1 % VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C 7
Gain error vs temperature 1.5 20 ppm/°C TA = –40°C to +125°C 7
Nonlinearity error -0.01 0.01 % VOUT = 0.5 V to VS – 0.5 V 7
Maximum capacitive load 1 nF No sustained oscillation 7
Quiescent current (INA180) IQ 197 260 µA VSENSE = 10 mV 7
Quiescent current (INA180), over temperature IQ 300 µA VSENSE = 10 mV, TA = –40°C to +125°C 7
Input bias current IIB 0.1 µA VSENSE = 0 mV, VIN+ = 0 V 7
Input bias current IIB 80 µA VSENSE = 0 mV 7
Gain (A2 devices) G 50 V/V A2 devices 7
Bandwidth BW 210 kHz A2 devices, CLOAD = 10 pF 7
Slew rate SR 2 V/µs 7
Voltage noise density, RTI 40 nV/√Hz 7
Junction-to-ambient thermal resistance RθJA 197.1 °C/W 6
Junction-to-case (top) thermal resistance RθJC(top) 95.8 °C/W 6
Junction-to-board thermal resistance RθJB 53.1 °C/W 6
Junction-to-top characterization parameter ψJT 23.4 °C/W 6
Junction-to-board characterization parameter ψJB 52.7 °C/W 6

CAD (KiCad official)

  • Symbol: INA180A2IDBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: ina180a2idbvr-etched.step / ina180a2idbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina180a2idbvr.step / ina180a2idbvr.glb are the bare package body.

3D model downloads

Two STEP files. Same geometry, different body top:

File Size Use it when
ina180a2idbvr.step 85 KB You want the bare part, or you mark your own boards.
ina180a2idbvr-etched.step 2.2 MB You want the part with INA180A2IDBVR already on it.

The marking in the etched file is real recessed geometry cut into the solid, not a texture or a decal: 548 faces against 102 in the bare model. It survives export, section views, and rendering in any CAD tool, and it drops straight into KiCad or Fusion with no extra setup.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (45 pp, sha256 c0bafee8d4b11bae, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF