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INA111AP

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Texas Instruments Instrumentation Amplifiers, PDIP-8. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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INA111AP

Texas Instruments · Instrumentation Amplifiers · PDIP-8

INA111AP from Texas Instruments, in a PDIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RG passive One of two gain-setting resistor terminals; a single external resistor RG sets the gain as G = 1 + 50kΩ/RG, with no connection giving G = 1.
2 -IN input Inverting signal input (VIN−) of the instrumentation amplifier, which must have a bias-current return path and whose linear common-mode range is about ±12V.
3 +IN input Non-inverting signal input (VIN+) of the instrumentation amplifier, which must have a bias-current return path and whose linear common-mode range is about ±12V.
4 V- power_in Negative power supply terminal; the supply range is ±6V to ±18V and inputs are protected to 0.7V below this pin.
5 Ref input Output reference terminal, normally grounded, that must be driven from a low-impedance connection to maintain good common-mode rejection.
6 VO output Amplifier output, which is short-circuit protected to ground (continuous) and typically swings ±12.7V at 5mA.
7 V+ power_in Positive power supply terminal; the supply range is ±6V to ±18V and inputs are protected to 15V above this pin.
8 RG passive Second gain-setting resistor terminal, paired with pin 1; the external RG resistor sets the gain and its stability affects gain accuracy and drift.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package PDIP-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Offset Voltage, RTI (initial, max) VOS -1000 1000 µV TA = +25°C; AP max printed as ±1000 + 5000/G 2
Offset Voltage, RTI (initial, typ) VOS 200 µV TA = +25°C; AP typ printed as ±200 + 500/G 2
Offset Voltage vs Temperature (max) -10 10 µV/°C TA = TMIN to TMAX; printed as ±10 + 100/G 2
Offset Voltage vs Temperature (typ) 2 µV/°C TA = TMIN to TMAX; printed as ±2 + 20/G 2
Offset Voltage vs Power Supply (max) 30 µV/V VS = ±6V to ±18V; printed as 30 + 100/G 2
Offset Voltage vs Power Supply (typ) 2 µV/V VS = ±6V to ±18V; printed as 2 + 10/G 2
Common-Mode Rejection G = 1 CMR 75 dB VCM = ±10V, ΔRS = 1kΩ 2
Common-Mode Rejection G = 10 CMR 90 dB VCM = ±10V, ΔRS = 1kΩ 2
Common-Mode Rejection G = 100 CMR 100 dB VCM = ±10V, ΔRS = 1kΩ 2
Common-Mode Rejection G = 1000 CMR 100 dB VCM = ±10V, ΔRS = 1kΩ 2
Input Bias Current (max) IB -20 20 pA 2
Input Bias Current (typ) IB 2 pA 2
Offset Current (max) IOS -10 10 pA 2
Offset Current (typ) IOS 0.1 pA 2
Input-Referred Noise Voltage en 13 nV/√Hz G = 1000, RS = 0Ω, f = 100Hz 2
Input-Referred Noise Voltage en 10 nV/√Hz G = 1000, RS = 0Ω, f = 1kHz 2
Input-Referred Noise Voltage p-p en 1 µVp-p G = 1000, RS = 0Ω, fB = 0.1Hz to 10Hz 2
Noise Current in 0.8 fA/√Hz f = 10kHz 2
Range of Gain G 1 10000 V/V 2
Gain vs Temperature G = 1 -10 1 10 ppm/°C G = 1; typ ±1, max ±10 2
50kΩ Resistance Temperature Coefficient -100 25 100 ppm/°C Footnote (1): temperature coefficient of the 50kΩ term in the gain equation; typ ±25, max ±100 2
Output Voltage (max swing) VO -12.7 12.7 V IO = 5mA, TMIN to TMAX; typ ±12.7 as printed, min ±11 is in review 2
Load Capacitance Stability CL 1000 pF 2
Short Circuit Current ISC -25 30 mA 2
Bandwidth, -3dB G = 1 BW 2 MHz 2
Bandwidth, -3dB G = 10 BW 2 MHz 2
Bandwidth, -3dB G = 100 BW 450 kHz 2
Bandwidth, -3dB G = 1000 BW 50 kHz 2
Slew Rate SR 17 V/µs VO = ±10V, G = 2 to 100 2
Settling Time, 0.01% G = 1 tS 2 µs 2
Settling Time, 0.01% G = 10 tS 2 µs 2
Settling Time, 0.01% G = 100 tS 4 µs 2
Settling Time, 0.01% G = 1000 tS 30 µs 2
Overload Recovery 1 µs 50% Overdrive 2
Supply Voltage (recommended, ±) VS 6 15 18 V Printed as ±6 / ±15 / ±18 2
Quiescent Current IQ 3.3 4.5 mA VIN = 0V 2
Specification Temperature Range -40 85 °C Specification range 2
Operating Temperature Range TA -40 125 °C Operating 2
Thermal Resistance Junction-to-Ambient θJA 100 °C/W 2
Supply Voltage (absolute max) VS 18 V Supply voltage ±18V 3
Input Voltage Range (absolute) VIN -0.7 15 V Relative to (V-) −0.7V to (V+) +15V 3
Operating Temperature (absolute) TA -40 125 °C 3
Storage Temperature TSTG -40 125 °C 3
Junction Temperature TJ 150 °C 3
Lead Temperature (soldering) 300 °C soldering, 10s 3

CAD (KiCad official)

  • Symbol: INA111AP
  • Footprint: Package_DIP:DIP-8_W7.62mm
  • 3D model: PDIP-8 (KiCad packages3D, STEP)
  • 3D model files: ina111ap-etched.step / ina111ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina111ap.step / ina111ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (17 pp, sha256 bb8527e3ee92e90a, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF