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INA102ASOIC8

analogysemi · Instrumentation Amplifiers · SOIC-8

INA102ASOIC8 from analogysemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RG passive Connect a resistor between the two RG pins (1 and 8) to set gain, using RG = 49.4kΩ/(G−1); for G = 1 the RG pins are left unconnected.
2 -IN input Signal negative input, whose input voltage range is −VS + 0.1 V to +VS − 2 V for the INA102.
3 +IN input Signal positive input, whose input voltage range is −VS + 0.1 V to +VS − 2 V for the INA102.
4 -VS power_in Negative power supply; the INA102 split-supply operating range is ±2 V to ±19 V.
5 REF input Output reference voltage input that defines the zero-output level, with an allowable range of 2 V within the supply voltages and a low-impedance connection recommended for best CMR.
6 OUTPUT output Amplifier output, referred to the REF pin, with a specified short-circuit current of ±17 mA over temperature.
7 +VS power_in Positive power supply; the INA102 split-supply operating range is ±2 V to ±19 V.
8 RG passive Connect a resistor between the two RG pins (1 and 8) to set gain, using RG = 49.4kΩ/(G−1); for G = 1 the RG pins are left unconnected.

Key specifications

Parameter Value
Manufacturer analogysemi
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Temperature, TA, INA102 TA -55 125 °C INA102 4
Current, any pin except power supply -10 10 mA Any pin except power supply 4
Storage Temperature Tstg -65 150 °C 4
Supply Voltage 20 V Supply ±VS 4
Soldering Temperature 300 °C 10 s 4
Operating Voltage Range, split supply 2 18 19 V Split supply, ±VS 5
Operating Voltage Range, single supply 4 36 38 V Single supply 5
Specified Temperature Range, INA102 -55 125 °C INA102 5
Gain Range G 1 10 K G = 1 + (49.4kΩ / RG) 6
Gain Error 0.02 0.04 % VOUT = ±10V, G = 1 6
Gain Error 0.03 0.08 % VOUT = ±10V, G = 10 6
Gain Error 0.03 0.15 % VOUT = ±10V, G = 1000 6
Nonlinearity 0.8 ppm VOUT = −10V to +10V, G = 1, RL = 10kΩ 6
Nonlinearity 4 ppm VOUT = −10V to +10V, G = 10, RL = 10kΩ 6
Nonlinearity 30 ppm VOUT = −10V to +10V, G = 100, RL = 10kΩ 6
Nonlinearity 60 ppm VOUT = −10V to +10V, G = 1000, RL = 10kΩ 6
Gain vs. Temperature 0.5 2.5 ppm/°C G = 1 6
Gain vs. Temperature 5 26 ppm/°C Gain > 1 6
Input Offset Voltage, VOSI VOSI -12 2.5 12 μV VS = ±18V 6
Input Offset Voltage, VOSI, overtemperature VOSI -17 17 μV VS = ±2V to ±19V, overtemperature 6
Output Offset Voltage, VOSO VOSO -240 40 240 μV VS = ±18V 6
Output Offset Voltage, VOSO, overtemperature VOSO -420 420 μV VS = ±2V to ±19V, overtemperature 6
Offset Referred to Input vs. Supply (PSR) PSR 108 133 dB VS = ±2V to ±20V, G = 1 6
Offset Referred to Input vs. Supply (PSR), overtemperature PSR 105 dB VS = ±2V to ±20V, G = 1, overtemperature 6
Offset Referred to Input vs. Supply (PSR) PSR 125 140 dB VS = ±2V to ±20V, G = 10 6
Offset Referred to Input vs. Supply (PSR), overtemperature PSR 125 dB VS = ±2V to ±20V, G = 10, overtemperature 6
Offset Referred to Input vs. Supply (PSR) PSR 130 144 dB VS = ±2V to ±20V, G = 100 6
Offset Referred to Input vs. Supply (PSR), overtemperature PSR 130 dB VS = ±2V to ±20V, G = 100, overtemperature 6
Offset Referred to Input vs. Supply (PSR) PSR 130 146 dB VS = ±2V to ±20V, G = 1000 6
Input Bias Current 1 3 nA 6
Input Bias Current, overtemperature 3.5 10 nA Overtemperature 6
Input Offset Current 0.6 2.2 nA 6
Input Offset Current, overtemperature 2.4 4 nA Overtemperature 6
Common-Mode Rejection Ratio, DC CMRR 97 104 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 1 7
Common-Mode Rejection Ratio, DC, overtemperature CMRR 90 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 1, overtemp 7
Common-Mode Rejection Ratio, DC CMRR 110 124 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 10 7
Common-Mode Rejection Ratio, DC, overtemperature CMRR 107 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 10, overtemp 7
Common-Mode Rejection Ratio, DC CMRR 129 141 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 100 7
Common-Mode Rejection Ratio, DC, overtemperature CMRR 128 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 100, overtemp 7
Common-Mode Rejection Ratio, DC CMRR 136 157 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 1000 7
Common-Mode Rejection Ratio, DC, overtemperature CMRR 136 dB VCM = (-VS + 0.1V) to (+VS, 2V), G = 1000, overtemp 7
Short Circuit Current, overtemperature -17 17 mA Overtemperature 7
Reference Gain to Output 1.2 27 μV/V 7
Quiescent Current IQ 1.56 1.9 mA VS = ±2V to ±19V 7
Quiescent Current, overtemperature IQ 2 mA Overtemperature 7
Junction-to-Ambient Thermal Resistance RθJA 90.6 °C/W SOIC-8 5
Junction-to-Board Thermal Resistance RθJB 47.6 °C/W SOIC-8 5
Junction-to-Top Characterization Parameter ψJT 3.6 °C/W SOIC-8 5
Junction-to-Board Characterization Parameter ψJB 47 °C/W SOIC-8 5
Junction-to-Case (Top) Thermal Resistance RθJC(top) 35 °C/W SOIC-8 5
Junction-to-Case (Bottom) Thermal Resistance RθJC(bot) 50.8 °C/W SOIC-8 5

CAD (KiCad official)

  • Symbol: INA102ASOIC8
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ina102asoic8-etched.step / ina102asoic8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina102asoic8.step / ina102asoic8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: analogysemi datasheet (25 pp, sha256 c668acc583d72f0c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF