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IMZA65R072M1HXKSA1

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Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesimza65r072m1hxksa1factory-2.0.0extractor-text

Changed since verified IMZA65R072M1HXKSA1

by Ray · last 2 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IMZA65R072M1HXKSA1 · TO-247-4 · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 15-page datasheet
  • ✓distributor: lcsc C3029556, digikey 448-IMZA65R072M1HXKSA1-ND, mouser 726-IMZA65R072M1HXKS
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ih1htn45/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! imza65r072m1hxksa1.kicad_sym✓ imza65r072m1hxksa1.kicad_mod✓ imza65r072m1hxksa1.step
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Contents

README

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IMZA65R072M1HXKSA1

Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4

IMZA65R072M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the MOSFET, electrically connected to the tab, rated 650 V VDS with continuous drain current of 28 A at TC=25°C.
2 Power Source passive Main power source terminal carrying the drain current return path, with the Kelvin driver source on pin 3 providing up to 4 times lower switching losses.
3 Driver Source passive Kelvin driver source for the gate drive return, kept separate from the power source on pin 2 to reduce switching losses.
4 Gate input Gate input with recommended driving voltage VGS of 0 to 18 V AC (f>1Hz) and dynamic range of -5 to 23 V for negative pulses up to 15 ns.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-4
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 28 A TC=25°C 3
Continuous drain current ID 18 A TC=100°C 3
Pulsed drain current ID,pulse 69 A TC=25°C 3
Avalanche energy, single pulse EAS 114 mJ ID=4.3A,VDD=50V,L=12.3mH;see table 10 3
Avalanche energy, repetitive EAR 0.57 mJ ID=4.3A,VDD=50V;see table 10 3
Avalanche current, single pulse IAS 4.3 A 3
MOSFET dv/dt ruggedness dv/dt 200 V/ns VDS=0...400V 3
Gate source voltage (recommended driving voltage) VGS 0 18 V AC(f>1Hz) 3
Gate source voltage (dynamic) VGS -5 23 V tpulse,negative<=15ns 3
Power dissipation Ptot 96 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature TJ -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 28 A TC=25°C 3
Diode pulse current IS,pulse 69 A TC=25°C 3
Thermal resistance, junction - case RthJC 1.3 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wave soldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=0.4mA 5
Gate threshold voltage V(GS)th 3.5 4.5 5.7 V VDS=VGS,ID=4mA 5
Zero gate voltage drain current IDSS 1 150 µA VDS=650V,VGS=0V,TJ=25°C 5
Zero gate voltage drain current IDSS 2 µA VDS=650V,VGS=0V,TJ=150°C 5
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 0.072 0.094 Ω VGS=18V,ID=13.3A,TJ=25°C 5
Drain-source on-state resistance RDS(on) 0.094 Ω VGS=18V,ID=13.3A,TJ=150°C 5
Output capacitance Coss 86 112 pF VGS=0V,VDS=400V,f=250kHz 5
Output charge Qoss 52 68 nC calculation based on Coss 5

CAD (KiCad official)

  • Symbol: IMZA65R072M1HXKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4 (KiCad packages3D, STEP)
  • 3D model files: imza65r072m1hxksa1-etched.step / imza65r072m1hxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); imza65r072m1hxksa1.step / imza65r072m1hxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 a9a748e7a59f6353, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF