component
IMZ120R060M1HXKSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IMZ120R060M1HXKSA1
Infineon Technologies · MOSFETs · TO-247-4
IMZ120R060M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain of the 1200V SiC MOSFET, rated for 36A DC at TC = 25°C. |
| 2 | Source | passive | Power source terminal; not exchangeable with the sense pin, as swapping them might lead to malfunction. |
| 3 | Sense | passive | Sense pin for optimized switching performance; not exchangeable with the source pin, as swapping them might lead to malfunction. |
| 4 | Gate | input | Gate input with recommended turn-on voltage of 15 to 18V, recommended turn-off voltage of 0V and absolute maximum of -7 to 23V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 1200 | V | Tvj ≥ 25°C | 3 | ||
| DC drain current | ID | 36 | A | VGS = 18V, TC = 25°C | 3 | ||
| DC drain current | ID | 26 | A | VGS = 18V, TC = 100°C | 3 | ||
| Pulsed drain current | ID,pulse | 76 | A | tp limited by Tvjmax, VGS = 18V | 3 | ||
| DC body diode forward current | ISD | 36 | A | VGS = 0V, TC = 25°C | 3 | ||
| DC body diode forward current | ISD | 22 | A | VGS = 0V, TC = 100°C | 3 | ||
| Pulsed body diode current | ISD,pulse | 76 | A | tp limited by Tvjmax | 3 | ||
| Gate-source voltage (max transient) | VGS | -7 | 23 | V | Max transient voltage, < 1% duty cycle | 3 | |
| Recommended turn-on gate voltage | VGS,on | 15 | 18 | V | 3 | ||
| Recommended turn-off gate voltage | VGS,off | 0 | V | 3 | |||
| Short-circuit withstand time | tSC | 3 | µs | VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C | 3 | ||
| Power dissipation | Ptot | 150 | W | TC = 25°C, limited by Tvjmax | 3 | ||
| Power dissipation | Ptot | 75 | W | TC = 100°C, limited by Tvjmax | 3 | ||
| Virtual junction temperature | Tvj | -55 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | Tsold | 260 | °C | wave soldering only at leads, 1.6mm from case for 10 s | 3 | ||
| Mounting torque | M | 0.6 | Nm | M3 screw, max 3 mounting processes | 3 | ||
| Thermal resistance, junction-case | Rth(j-c) | 0.8 | 1 | K/W | MOSFET/body diode | 4 | |
| Thermal resistance, junction-ambient | Rth(j-a) | 62 | K/W | leaded | 4 | ||
| Drain-source on-state resistance | RDS(on) | 60 | 83 | mΩ | VGS = 18V, ID = 13A, Tvj = 25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 80 | 106 | mΩ | VGS = 15V, ID = 13A, Tvj = 25°C | 5 | |
| Body diode forward voltage | VSD | 4.1 | 5.2 | V | VGS = 0V, ISD = 13A, Tvj = 25°C | 5 | |
| Gate-source threshold voltage | VGS(th) | 3.5 | 4.5 | 5.7 | V | ID = 5.6mA, VDS = VGS, Tvj = 25°C, tested after 1 ms pulse at VGS = 20V | 5 |
| Zero gate voltage drain current | IDSS | 0.6 | 180 | µA | VGS = 0V, VDS = 1200V, Tvj = 25°C | 5 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS = 23V, VDS = 0V | 5 | ||
| Gate-source leakage current | IGSS | -100 | nA | VGS = -7V, VDS = 0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 76 | mΩ | VGS = 18V, ID = 13A, Tvj = 100°C | 5 | ||
| Drain-source on-state resistance | RDS(on) | 113 | mΩ | VGS = 18V, ID = 13A, Tvj = 175°C | 5 | ||
| Body diode forward voltage | VSD | 4 | V | VGS = 0V, ISD = 13A, Tvj = 100°C | 5 | ||
| Body diode forward voltage | VSD | 3.9 | V | VGS = 0V, ISD = 13A, Tvj = 175°C | 5 | ||
| Gate-source threshold voltage | VGS(th) | 3.6 | V | ID = 5.6mA, VDS = VGS, Tvj = 175°C | 5 | ||
| Zero gate voltage drain current | IDSS | 1.9 | µA | VGS = 0V, VDS = 1200V, Tvj = 175°C | 5 | ||
| Transconductance | gfs | 7 | S | VDS = 20V, ID = 13A | 5 | ||
| Internal gate resistance | RG,int | 6 | Ω | f = 1MHz, VAC = 25mV | 5 | ||
| Input capacitance | Ciss | 1060 | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 | ||
| Output capacitance | Coss | 58 | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 | ||
| Reverse capacitance | Crss | 6.5 | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 | ||
| Coss stored energy | Eoss | 22 | µJ | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 | ||
| Total gate charge | QG | 31 | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 | ||
| Gate to source charge | QGS,pl | 9 | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 | ||
| Gate to drain charge | QGD | 7 | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 | ||
| Turn-on delay time | td(on) | 6 | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Rise time | tr | 5 | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Turn-off delay time | td(off) | 12.7 | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Fall time | tf | 10.8 | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Turn-on energy | Eon | 135 | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Turn-off energy | Eoff | 31 | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Total switching energy | Etot | 166 | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 | ||
| Diode reverse recovery charge | Qrr | 180 | nC | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 25°C | 7 | ||
| Diode peak reverse recovery current | Irrm | 5 | A | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 25°C | 7 | ||
| Turn-on energy | Eon | 196 | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 175°C | 7 | ||
| Turn-off energy | Eoff | 36 | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 175°C | 7 | ||
| Total switching energy | Etot | 232 | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 175°C | 7 | ||
| Diode reverse recovery charge | Qrr | 225 | nC | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 175°C | 7 | ||
| Diode peak reverse recovery current | Irrm | 7 | A | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 175°C | 7 |
CAD (KiCad official)
- Symbol:
IMZ120R060M1HXKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
imz120r060m1hxksa1-etched.step/imz120r060m1hxksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imz120r060m1hxksa1.step/imz120r060m1hxksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
0883cba64d3eb70d, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IMZ120R060M1HXKSA1
**Infineon Technologies** · MOSFETs · TO-247-4
IMZ120R060M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain of the 1200V SiC MOSFET, rated for 36A DC at TC = 25°C. |
| 2 | Source | passive | Power source terminal; not exchangeable with the sense pin, as swapping them might lead to malfunction. |
| 3 | Sense | passive | Sense pin for optimized switching performance; not exchangeable with the source pin, as swapping them might lead to malfunction. |
| 4 | Gate | input | Gate input with recommended turn-on voltage of 15 to 18V, recommended turn-off voltage of 0V and absolute maximum of -7 to 23V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | | | 1200 | V | Tvj ≥ 25°C | 3 |
| DC drain current | ID | | | 36 | A | VGS = 18V, TC = 25°C | 3 |
| DC drain current | ID | | | 26 | A | VGS = 18V, TC = 100°C | 3 |
| Pulsed drain current | ID,pulse | | | 76 | A | tp limited by Tvjmax, VGS = 18V | 3 |
| DC body diode forward current | ISD | | | 36 | A | VGS = 0V, TC = 25°C | 3 |
| DC body diode forward current | ISD | | | 22 | A | VGS = 0V, TC = 100°C | 3 |
| Pulsed body diode current | ISD,pulse | | | 76 | A | tp limited by Tvjmax | 3 |
| Gate-source voltage (max transient) | VGS | -7 | | 23 | V | Max transient voltage, < 1% duty cycle | 3 |
| Recommended turn-on gate voltage | VGS,on | 15 | | 18 | V | | 3 |
| Recommended turn-off gate voltage | VGS,off | | 0 | | V | | 3 |
| Short-circuit withstand time | tSC | | | 3 | µs | VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C | 3 |
| Power dissipation | Ptot | | | 150 | W | TC = 25°C, limited by Tvjmax | 3 |
| Power dissipation | Ptot | | | 75 | W | TC = 100°C, limited by Tvjmax | 3 |
| Virtual junction temperature | Tvj | -55 | | 175 | °C | | 3 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |
| Soldering temperature | Tsold | | | 260 | °C | wave soldering only at leads, 1.6mm from case for 10 s | 3 |
| Mounting torque | M | | | 0.6 | Nm | M3 screw, max 3 mounting processes | 3 |
| Thermal resistance, junction-case | Rth(j-c) | | 0.8 | 1 | K/W | MOSFET/body diode | 4 |
| Thermal resistance, junction-ambient | Rth(j-a) | | | 62 | K/W | leaded | 4 |
| Drain-source on-state resistance | RDS(on) | | 60 | 83 | mΩ | VGS = 18V, ID = 13A, Tvj = 25°C | 5 |
| Drain-source on-state resistance | RDS(on) | | 80 | 106 | mΩ | VGS = 15V, ID = 13A, Tvj = 25°C | 5 |
| Body diode forward voltage | VSD | | 4.1 | 5.2 | V | VGS = 0V, ISD = 13A, Tvj = 25°C | 5 |
| Gate-source threshold voltage | VGS(th) | 3.5 | 4.5 | 5.7 | V | ID = 5.6mA, VDS = VGS, Tvj = 25°C, tested after 1 ms pulse at VGS = 20V | 5 |
| Zero gate voltage drain current | IDSS | | 0.6 | 180 | µA | VGS = 0V, VDS = 1200V, Tvj = 25°C | 5 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS = 23V, VDS = 0V | 5 |
| Gate-source leakage current | IGSS | | | -100 | nA | VGS = -7V, VDS = 0V | 5 |
| Drain-source on-state resistance | RDS(on) | | 76 | | mΩ | VGS = 18V, ID = 13A, Tvj = 100°C | 5 |
| Drain-source on-state resistance | RDS(on) | | 113 | | mΩ | VGS = 18V, ID = 13A, Tvj = 175°C | 5 |
| Body diode forward voltage | VSD | | 4 | | V | VGS = 0V, ISD = 13A, Tvj = 100°C | 5 |
| Body diode forward voltage | VSD | | 3.9 | | V | VGS = 0V, ISD = 13A, Tvj = 175°C | 5 |
| Gate-source threshold voltage | VGS(th) | | 3.6 | | V | ID = 5.6mA, VDS = VGS, Tvj = 175°C | 5 |
| Zero gate voltage drain current | IDSS | | 1.9 | | µA | VGS = 0V, VDS = 1200V, Tvj = 175°C | 5 |
| Transconductance | gfs | | 7 | | S | VDS = 20V, ID = 13A | 5 |
| Internal gate resistance | RG,int | | 6 | | Ω | f = 1MHz, VAC = 25mV | 5 |
| Input capacitance | Ciss | | 1060 | | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 |
| Output capacitance | Coss | | 58 | | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 |
| Reverse capacitance | Crss | | 6.5 | | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 |
| Coss stored energy | Eoss | | 22 | | µJ | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 |
| Total gate charge | QG | | 31 | | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 |
| Gate to source charge | QGS,pl | | 9 | | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 |
| Gate to drain charge | QGD | | 7 | | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 |
| Turn-on delay time | td(on) | | 6 | | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Rise time | tr | | 5 | | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Turn-off delay time | td(off) | | 12.7 | | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Fall time | tf | | 10.8 | | ns | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Turn-on energy | Eon | | 135 | | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Turn-off energy | Eoff | | 31 | | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Total switching energy | Etot | | 166 | | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 25°C | 7 |
| Diode reverse recovery charge | Qrr | | 180 | | nC | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 25°C | 7 |
| Diode peak reverse recovery current | Irrm | | 5 | | A | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 25°C | 7 |
| Turn-on energy | Eon | | 196 | | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 175°C | 7 |
| Turn-off energy | Eoff | | 36 | | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 175°C | 7 |
| Total switching energy | Etot | | 232 | | µJ | VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, Tvj = 175°C | 7 |
| Diode reverse recovery charge | Qrr | | 225 | | nC | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 175°C | 7 |
| Diode peak reverse recovery current | Irrm | | 7 | | A | VDD = 800V, ISD = 13A, VGS = 0V, dif/dt = 1000A/µs, Tvj = 175°C | 7 |
## CAD (KiCad official)
- Symbol: `IMZ120R060M1HXKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files: `imz120r060m1hxksa1-etched.step` / `imz120r060m1hxksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `imz120r060m1hxksa1.step` / `imz120r060m1hxksa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/imz120r060m1hxksa1-datasheet.pdf) (17 pp, sha256 `0883cba64d3eb70d`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/imz120r060m1hxksa1-datasheet.pdf)