component
IMZ120R030M1HXKSA1
Public Made by Adomby adom
Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads on click. Unloads only if this page sits in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads on click. Unloads only if this page sits in the background.
PCB Footprint
Open full view ↗Loads on click. Unloads only if this page sits in the background.
Datasheet
Open in new tab ↗Loads on click. Unloads only if this page sits in the background.
README
markdownIMZ120R030M1HXKSA1
Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4
IMZ120R030M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal with 1200V maximum drain-source voltage (VDSS), 56A DC drain current at TC=25°C, primary current-carrying terminal for the SiC power MOSFET. |
| 2 | Source | power_in | Source terminal and circuit reference with integrated body diode, forward voltage VSD = 4.1-5.2V at ISD=25A and Tvj=25°C, maximum 56A DC current at TC=25°C. |
| 3 | Sense | output | Current sense pin for optimized switching performance and monitoring; not interchangeable with source pin per device design requirements. |
| 4 | Gate | input | Gate control input with recommended turn-on voltage VGS,on = 15-18V, turn-off voltage VGS,off = 0V, maximum transient voltage rating -7 to 23V, gate-source leakage current IGSS ≤ 120nA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
CAD (KiCad official)
- Symbol:
IMZ120R030M1HXKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
imz120r030m1hxksa1-etched.step/imz120r030m1hxksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imz120r030m1hxksa1.step/imz120r030m1hxksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
b11271b276297699, retrieved 2026-09-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).