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Initial commit: component/imw120r060m1h

Ray ·c44a4c05c1 ·1mo ago
2 files changed +150
README.mdadded+39
@@ -0,0 +1,39 @@+# IMW120R060M1H++**Infineon Technologies** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3++IMW120R060M1H from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | Gate | input | Gate control input terminal with recommended on-voltage of 18V and off-voltage of 0V; maximum transient VGS range is -7V to +23V. |+| 2 | Drain | passive | Drain terminal with maximum rated VDS of 1200V, maximum ID of 36A at TC=25°C, and RDS(on)=60mΩ at VGS=18V and ID=13A. |+| 3 | Source | power_in | Source terminal; gate voltage reference and drain current return path rated for 36A maximum DC current at TC=25°C. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Infineon Technologies |+| Package | TO-247-3 |+| Category | Silicon Carbide (SiC) Devices |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `IMW120R060M1H`+- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`+- 3D model: TO-247-3 (KiCad packages3D, STEP)+- 3D model files: `imw120r060m1h-etched.step` / `imw120r060m1h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `imw120r060m1h.step` / `imw120r060m1h.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897128319606784) (17 pp, sha256 `ddb1352a32555ca0`, retrieved 2026-09-18, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/imw120r060m1h-datasheet.pdf)
page.jsonadded+111
@@ -0,0 +1,111 @@+{+  "slug": "imw120r060m1h",+  "version": "0.1.0",+  "type": "component",+  "description": "Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "tags": [+    "component",+    "silicon carbide (sic) devices",+    "imw120r060m1h",+    "factory-2.0.0",+    "extractor-text"+  ],+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "imw120r060m1h.kicad_sym",+    "imw120r060m1h.kicad_mod",+    "imw120r060m1h.glb",+    "imw120r060m1h.step",+    "imw120r060m1h.lbr",+    "docs/hero.png",+    "docs/imw120r060m1h-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html"+  ],+  "component": {+    "mpn": "IMW120R060M1H",+    "manufacturer": "Infineon Technologies",+    "package": "TO-247-3",+    "pin_count": 3,+    "category": "Silicon Carbide (SiC) Devices",+    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897128319606784",+    "parts": {+      "symbol": "imw120r060m1h.kicad_sym",+      "footprint": "imw120r060m1h.kicad_mod",+      "model_3d": "imw120r060m1h-etched.glb",+      "model_3d_plain": "imw120r060m1h.glb",+      "model_3d_step": "imw120r060m1h-etched.step",+      "model_3d_step_plain": "imw120r060m1h.step",+      "lbr": "imw120r060m1h.lbr"+    },+    "distributor_links": {+      "lcsc": "C536281"+    },+    "pins": [+      {+        "number": "1",+        "name": "Gate",+        "type": "input",+        "description": "Gate control input terminal with recommended on-voltage of 18V and off-voltage of 0V; maximum transient VGS range is -7V to +23V."+      },+      {+        "number": "2",+        "name": "Drain",+        "type": "passive",+        "description": "Drain terminal with maximum rated VDS of 1200V, maximum ID of 36A at TC=25°C, and RDS(on)=60mΩ at VGS=18V and ID=13A."+      },+      {+        "number": "3",+        "name": "Source",+        "type": "power_in",+        "description": "Source terminal; gate voltage reference and drain current return path rated for 36A maximum DC current at TC=25°C."+      }+    ],+    "provenance": {+      "extractor": "extract_pins 0.2",+      "factory_chain": {+        "factory": "2.0.0",+        "extractor": "extract_pins 0.2",+        "primary_model": "claude-haiku-4-5-20251001",+        "primary_mode": "text",+        "consensus_model": "claude-sonnet-4-6",+        "consensus": "agreed",+        "guards": "pin_guards 0.1: passed",+        "guard_notes": [],+        "pages_sent": 17,+        "cost_usd": 0.1371,+        "at": "2026-09-18T02:23:47"+      },+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897128319606784",+        "pages": 17,+        "sha256": "ddb1352a32555ca0",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "visibility": "public",+  "org": "adom",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  }+}\ No newline at end of file