# IMBG65R083M1HXTMA1

**Infineon Technologies** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-263-7

IMBG65R083M1HXTMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate; the gate-source voltage operating range including undershoots is -2 V to 20 V, and the recommended driving voltage is 0 V to 18 V. |
| 2 | Driver Source | passive | Separate driver source pin that must not be exchanged with the power source pins, as exchanging them might lead to malfunction. |
| 3 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 4 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 5 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 6 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 7 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous DC drain current | ID |  |  | 28 | A | TC=25°C | 3 |
| Continuous DC drain current | ID |  |  | 20 | A | TC=100°C | 3 |
| Peak drain current | IDM |  |  | 59 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 95 | mJ | ID=3.6A,VDD=50V;see table 11 | 3 |
| Avalanche energy, repetitive | EAR |  |  | 0.48 | mJ | ID=3.6A,VDD=50V;see table 11 | 3 |
| Avalanche current, single pulse | IAS |  |  | 3.6 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 200 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -5 |  | 23 | V | static | 3 |
| Gate source voltage (transient) | VGS | -7 |  | 25 | V | tpulse,positive<=1%dutycycle/fsw | 3 |
| Power dissipation | Ptot |  |  | 126 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Operating junction temperature | TJ | -55 |  | 175 | °C |  | 3 |
| Continuous reverse drain current | ISDC |  |  | 28 | A | VGS=18V,TC=25°C | 3 |
| Continuous reverse drain current | ISDC |  |  | 19 | A | VGS=0V,TC=25°C | 3 |
| Repetitive peak reverse drain current | ISRM |  |  | 59 | A | TC=25°C,pulsewidth tp<=250ns | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 1.19 | °C/W |  | 4 |
| Thermal resistance, junction - ambient | RthJA |  |  | 62 | °C/W | device on PCB, minimal footprint | 4 |
| Thermal resistance, junction - ambient for SMD version | RthJA |  | 35 | 45 | °C/W | Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling | 4 |
| Soldering temperature, wave- & reflow soldering allowed | Tsold |  |  | 260 | °C | reflow MSL1 | 4 |
| Gate-source voltage operating range including undershoots | VGS | -2 |  | 20 | V |  | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 650 |  |  | V | VGS=0V,ID=0.33mA | 5 |
| Gate threshold voltage | VGS(th) | 3.5 | 4.5 | 5.7 | V | VDS=VGS,ID=3.3mA | 5 |
| Zero gate voltage drain current | IDSS |  | 1 | 150 | µA | VDS=650V,VGS=0V,TJ=25°C | 5 |
| Zero gate voltage drain current | IDSS |  | 3 |  | µA | VDS=650V,VGS=0V,TJ=175°C | 5 |
| Gate leakage current | IGSS |  |  | 100 | nA | VGS=20V,VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.083 | 0.111 | Ω | VGS=18V,ID=11.2A,TJ=25°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.116 |  | Ω | VGS=18V,ID=11.2A,TJ=175°C | 5 |
| Output capacitance | Coss |  | 73 | 95 | pF | VGS=0V,VDS=400V,f=250kHz | 5 |
| Output charge | Qoss |  | 44 | 57 | nC | calculation based on Coss | 5 |

## CAD (KiCad official)

- Symbol: `IMBG65R083M1HXTMA1`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin8`
- 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files: `imbg65r083m1hxtma1-etched.step` / `imbg65r083m1hxtma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `imbg65r083m1hxtma1.step` / `imbg65r083m1hxtma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/imbg65r083m1hxtma1-datasheet.pdf) (15 pp, sha256 `8ecf18910f073c88`, retrieved 2026-11-02, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/imbg65r083m1hxtma1-datasheet.pdf)