component
IMBG120R078M2HXTMA1
Public Made by Adomby adom
Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIMBG120R078M2HXTMA1
Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-263-7
IMBG120R078M2HXTMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; recommended turn-on gate voltage is 15...18 V and recommended turn-off gate voltage is -5...0 V, with maximum static gate-source voltage of -7...23 V. |
| 2 | Kelvin sense | passive | Kelvin sense contact; it is not exchangeable with the source pins, and an exchange might lead to malfunction. |
| 3 | Source | passive | Source terminal; it is not exchangeable with the Kelvin sense pin, and an exchange might lead to malfunction. |
| 4 | Source | passive | Source terminal; it is not exchangeable with the Kelvin sense pin, and an exchange might lead to malfunction. |
| 5 | Source | passive | Source terminal; it is not exchangeable with the Kelvin sense pin, and an exchange might lead to malfunction. |
| 6 | Source | passive | Source terminal; it is not exchangeable with the Kelvin sense pin, and an exchange might lead to malfunction. |
| 7 | Source | passive | Source terminal; it is not exchangeable with the Kelvin sense pin, and an exchange might lead to malfunction. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | Tsold | 260 | °C | reflow soldering (MSL1 according to JEDEC J-STD-020) | 3 | ||
| Thermal resistance, junction-case MOSFET/body diode | Rth(j-c) | 0.73 | 0.95 | K/W | 3 | ||
| Thermal resistance, junction-ambient | Rth(j-a) | 62 | K/W | 3 | |||
| Drain-source voltage | VDSS | 1200 | V | Tvj ≥ 25 °C | 3 | ||
| Continuous DC drain current | IDDC | 29 | A | VGS = 18 V Tc = 25 °C | 3 | ||
| Continuous DC drain current | IDDC | 21 | A | VGS = 18 V Tc = 100 °C | 3 | ||
| Peak drain current | IDM | 63 | A | VGS = 18 V, tp limited by Tvj(max) | 3 | ||
| Gate-source voltage, max. transient voltage | VGS | -10 | 25 | V | tp ≤ 0.5 µs, D < 0.01 | 3 | |
| Gate-source voltage, max. static voltage | VGS | -7 | 23 | V | 3 | ||
| Avalanche energy, single pulse | EAS | 112 | mJ | ID = 8.9 A, VDD = 50 V, L = 2.8 mH | 3 | ||
| Avalanche energy, repetitive | EAR | 0.56 | mJ | ID = 8.9 A, VDD = 50 V, L = 14.1 µH | 3 | ||
| Short-circuit withstand time | tSC | 2 | µs | VDD ≤ 800 V, VDS,peak < 1200 V, VGS(on) = 15 V, Tvj(start) = 25 °C | 3 | ||
| Power dissipation | Ptot | 158 | W | Tc = 25 °C, limited by Tvj(max) | 3 | ||
| Power dissipation | Ptot | 79 | W | Tc = 100 °C, limited by Tvj(max) | 3 | ||
| Recommended turn-on gate voltage | VGS(on) | 15 | 18 | V | 4 | ||
| Recommended turn-off gate voltage | VGS(off) | -5 | 0 | V | 4 | ||
| Gate-source threshold voltage | VGS(th) | 3.5 | 4.2 | 5.1 | V | ID = 2.8 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V), Tvj = 25 °C | 4 |
| Gate-source threshold voltage | VGS(th) | 3.2 | V | ID = 2.8 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V), Tvj = 175 °C | 4 | ||
| Zero gate-voltage drain current | IDSS | 80 | µA | VDS = 1200 V, VGS = 0 V, Tvj = 25 °C | 4 | ||
| Zero gate-voltage drain current | IDSS | 1.3 | µA | VDS = 1200 V, VGS = 0 V, Tvj = 175 °C | 4 | ||
| Gate leakage current | IGSS | 120 | nA | VDS = 0 V, VGS = 23 V | 4 | ||
| Gate leakage current | IGSS | -120 | nA | VDS = 0 V, VGS = -10 V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 78.1 | mΩ | ID = 8.9 A, Tvj = 25 °C, VGS(on) = 18 V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 159 | 206 | mΩ | ID = 8.9 A, Tvj = 150 °C, VGS(on) = 18 V | 4 | |
| Drain-source on-state resistance | RDS(on) | 185 | mΩ | ID = 8.9 A, Tvj = 175 °C, VGS(on) = 18 V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 97.5 | mΩ | ID = 8.9 A, Tvj = 25 °C, VGS(on) = 15 V | 4 | ||
| Turn-on delay time | td(on) | 2 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 25 °C | 4 | ||
| Turn-on delay time | td(on) | 1.7 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 175 °C | 4 | ||
| Rise time | tr | 13.4 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 25 °C | 4 | ||
| Rise time | tr | 13.3 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 175 °C | 4 | ||
| Turn-off delay time | td(off) | 3.4 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 25 °C | 4 | ||
| Turn-off delay time | td(off) | 6 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 175 °C | 4 | ||
| Fall time | tf | 2 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Tvj = 25 °C | 4 | ||
| Fall time | tf | 2.4 | ns | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Tvj = 175 °C | 4 | ||
| Turn-on energy | Eon | 49 | µJ | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 25 °C | 5 | ||
| Turn-on energy | Eon | 95 | µJ | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 175 °C | 5 | ||
| Turn-off energy | Eoff | 16 | µJ | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 25 °C | 5 | ||
| Turn-off energy | Eoff | 19.7 | µJ | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 175 °C | 5 | ||
| Total switching energy | Etot | 96 | µJ | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 25 °C, including Efr | 6 | ||
| Total switching energy | Etot | 201.7 | µJ | VDD = 800 V, ID = 8.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, Tvj = 175 °C, including Efr | 6 | ||
| Virtual junction temperature | Tvj | -55 | 175 | °C | 6 | ||
| Virtual junction temperature overload | Tvj(over) | 200 | °C | overload, cumulative max. 100 h, up to 5000 cycles, maximum ΔT limited to 100 K | 6 | ||
| Peak reverse drain current | ISM | 23 | A | VGS = 0 V, tp limited by Tvj(max) | 6 | ||
| Drain-source reverse voltage | VSD | 4.2 | 5.5 | V | ISD = 8.9 A, VGS = 0 V, Tvj = 25 °C | 6 | |
| Drain-source reverse voltage | VSD | 4.11 | V | ISD = 8.9 A, VGS = 0 V, Tvj = 100 °C | 6 | ||
| Drain-source reverse voltage | VSD | 4.05 | V | ISD = 8.9 A, VGS = 0 V, Tvj = 175 °C | 6 | ||
| MOSFET forward recovery charge | Qfr | 0.13 | µC | VDD = 800 V, ISD = 8.9 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Tvj = 25 °C | 6 | ||
| MOSFET forward recovery charge | Qfr | 0.21 | µC | VDD = 800 V, ISD = 8.9 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Tvj = 175 °C | 6 | ||
| MOSFET peak forward recovery current | Ifrm | 4.5 | A | VDD = 800 V, ISD = 8.9 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Tvj = 25 °C | 6 | ||
| MOSFET peak forward recovery current | Ifrm | 6.1 | A | VDD = 800 V, ISD = 8.9 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Tvj = 175 °C | 6 | ||
| MOSFET forward recovery energy | Efr | 31 | µJ | VDD = 800 V, ISD = 8.9 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Tvj = 25 °C | 7 | ||
| MOSFET forward recovery energy | Efr | 87 | µJ | VDD = 800 V, ISD = 8.9 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Tvj = 175 °C | 7 | ||
| Forward transconductance | gfs | 6 | S | ID = 8.9 A, VDS = 20 V | 4 | ||
| Internal gate resistance | RG,int | 10 | Ω | f = 1 MHz, VAC = 25 mV | 4 | ||
| Input capacitance | Ciss | 700 | pF | VDS = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV | 4 | ||
| Output capacitance | Coss | 28 | pF | VDS = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV | 4 | ||
| Reverse transfer capacitance | Crss | 2.4 | pF | VDS = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV | 4 | ||
| Coss stored energy | Eoss | 12 | µJ | VDS = 0...800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV, calculated based on Coss | 4 | ||
| Output charge | Qoss | 43.4 | nC | VDS = 0...800 V, VGS = 0 V, calculated based on Coss | 4 | ||
| Effective output capacitance, energy related | Co(er) | 37.5 | pF | VDS = 0...800 V, VGS = 0 V | 4 | ||
| Effective output capacitance, time related | Co(tr) | 54.2 | pF | ID = constant, VDS = 0...800 V, VGS = 0 V | 4 | ||
| Total gate charge | QG | 20.6 | nC | VDD = 800 V, ID = 8.9 A, VGS = -2/18 V, turn-on pulse | 4 | ||
| Plateau gate charge | QGS(pl) | 4.6 | nC | VDD = 800 V, ID = 8.9 A, VGS = -2/18 V, turn-on pulse | 4 | ||
| Gate-to-drain charge | QGD | 5.3 | nC | VDD = 800 V, ID = 8.9 A, VGS = -2/18 V, turn-on pulse | 4 |
CAD (KiCad official)
- Symbol:
IMBG120R078M2HXTMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
imbg120r078m2hxtma1-etched.step/imbg120r078m2hxtma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imbg120r078m2hxtma1.step/imbg120r078m2hxtma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
3f7e769c795d9d1b, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).