component
ILD217T
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownILD217T
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · SO-8
ILD217T from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the channel 1 gallium arsenide infrared LED; the input is rated for 6 V peak reverse voltage and 30 mA continuous forward current per channel. |
| 2 | C | passive | Cathode of the channel 1 infrared LED; the input is rated for 6 V peak reverse voltage and 30 mA continuous forward current per channel. |
| 3 | A | passive | Anode of the channel 2 infrared LED; the input is rated for 6 V peak reverse voltage and 30 mA continuous forward current per channel. |
| 4 | C | passive | Cathode of the channel 2 infrared LED; the input is rated for 6 V peak reverse voltage and 30 mA continuous forward current per channel. |
| 5 | E | passive | Emitter of the channel 2 silicon NPN phototransistor; the emitter-collector breakdown voltage BVECO is 7 V at IE = 10 µA. |
| 6 | C | passive | Collector of the channel 2 silicon NPN phototransistor; the collector-emitter breakdown voltage BVCEO is 70 V at IC = 10 µA. |
| 7 | E | passive | Emitter of the channel 1 silicon NPN phototransistor; the emitter-collector breakdown voltage BVECO is 7 V at IE = 10 µA. |
| 8 | C | passive | Collector of the channel 1 silicon NPN phototransistor; the collector-emitter breakdown voltage BVCEO is 70 V at IC = 10 µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Optoisolators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.2 | 1.55 | V | IF = 10 mA | 2 | |
| Reverse current | IR | 0.1 | 100 | μA | VR = 6 V | 2 | |
| Collector emitter breakdown voltage | BVCEO | 70 | V | IC = 10 μA | 2 | ||
| Emitter collector breakdown voltage | BVECO | 7 | V | IE = 10 μA | 2 | ||
| Collector emitter leakage current | ICEO | 5 | 50 | nA | VCE = 10 V, IF = 0 A | 2 | |
| Collector emitter saturation voltage | VCEsat | 0.4 | V | IF = 10 mA, IC = 2.5 mA | 2 | ||
| Resistance (input to output) | RIO | 100 | GΩ | 2 | |||
| Current transfer ratio | CTR | 100 | 120 | % | VCE = 5 V, IF = 1 mA | 2 | |
| Peak reverse voltage | VR | 6 | V | 1 | |||
| Peak pulsed current | 1 | A | 1 μs, 300 pps | 1 | |||
| Continuous forward current per channel | IF | 30 | mA | 1 | |||
| Power dissipation (INPUT section) | Pdiss | 50 | mW | 1 | |||
| Collector emitter breakdown voltage (absolute maximum) | BVCEO | 70 | V | 1 | |||
| Emitter collector breakdown voltage (absolute maximum) | BVECO | 7 | V | 1 | |||
| Power dissipation per channel (OUTPUT section) | Pdiss | 125 | mW | per channel | 1 | ||
| Isolation test voltage | VISO | 4000 | VRMS | t = 1 s | 2 | ||
| Total package dissipation | Ptot | 350 | mW | 2 LEDs and 2 detectors, 2 channels | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating temperature | Tamb | -55 | 100 | °C | 2 | ||
| Soldering time | Tsld | 10 | s | from 260 °C | 2 | ||
| Climatic classification / Comparative tracking index | CTI | 175 | 399 | 2 | |||
| Maximum transient isolation voltage | VIOTM | 6000 | V | 2 | |||
| Maximum repetitive peak isolation voltage | VIORM | 560 | V | 2 | |||
| Safety power dissipation | PSO | 350 | mW | 2 | |||
| Safety input current | ISI | 150 | mA | 2 | |||
| Safety temperature | TSI | 165 | °C | 2 | |||
| Creepage distance | 4 | mm | 2 | ||||
| Clearance distance | 4 | mm | 2 | ||||
| Insulation thickness | 0.2 | mm | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ABS | Insulation thickness 0.2 mm ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) | 2 |
CAD (KiCad official)
- Symbol:
ILD217T - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ild217t-etched.step/ild217t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ild217t.step/ild217t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (4 pp, sha256
2a96e0a8d13e21c1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).