component
IL223AT
Public Made by Adomby adom
Vishay Intertech Transistor Output Optocoupler, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| il223at-etched.glb | 3d ago |
| il223at-etched.step | 3d ago |
| il223at-hero.glb | 3d ago |
| il223at-hero.overlay.json | 3d ago |
| il223at.glb | 3d ago |
| il223at.kicad_mod | 3d ago |
| il223at.kicad_sym | 3d ago |
| il223at.lbr | 3d ago |
| il223at.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
IL223AT
Vishay Intertech · Transistor Output Optocoupler · SOIC-8
IL223AT from Vishay Intertech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | input | LED anode of the input GaAs infrared emitter, rated for 60 mA forward continuous current and 6.0 V peak reverse voltage. |
| 2 | C | passive | LED cathode of the input emitter, returned to the drive circuit; CTR is tested at IF = 1.0 mA. |
| 3 | NC | unconnected | No internal connection. |
| 4 | NC | unconnected | No internal connection. |
| 5 | E | passive | Emitter of the NPN photodarlington output transistor, with emitter-collector breakdown voltage of 5.0 V minimum. |
| 6 | C | passive | Collector of the NPN photodarlington output transistor, with collector-emitter breakdown voltage of 30 V minimum and 50 mA maximum DC collector current. |
| 7 | B | passive | Base connection of the photodarlington output transistor, with collector-base breakdown voltage of 70 V minimum. |
| 8 | NC | unconnected | No internal connection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOIC-8 |
| Category | Optocoupler |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak reverse voltage | VR | 6 | V | Tamb = 25 °C | 2 | ||
| Input forward continuous current | IF | 60 | mA | Tamb = 25 °C | 2 | ||
| Input power dissipation | Pdiss | 90 | mW | Tamb = 25 °C | 2 | ||
| Input power dissipation derating | 1.2 | mW/°C | Derate linearly from 25 °C | 2 | |||
| Collector emitter breakdown voltage | BVCEO | 30 | V | 2 | |||
| Emitter collector breakdown voltage | BVECO | 5 | V | 2 | |||
| Collector base breakdown voltage | BVCBO | 70 | V | 2 | |||
| Collector current DC | ICMAX | 50 | mA | DC | 2 | ||
| Collector current pulsed | ICMAX | 100 | mW | t < 1.0 ms | 2 | ||
| Output power dissipation | Pdiss | 150 | mW | Tamb = 25 °C | 2 | ||
| Output power dissipation derating | 2 | mW/°C | Derate linearly from 25 °C | 2 | |||
| Isolation test voltage | VISO | 4000 | VRMS | t = 1.0 s | 2 | ||
| Total package dissipation | Ptot | 240 | mW | at 25 °C ambient, LED and detector | 2 | ||
| Total package dissipation derating | 3.2 | mW/°C | Derate linearly from 25 °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating temperature | Tamb | -55 | 100 | °C | 2 | ||
| Soldering time at 260 °C | 10 | s | 2 | ||||
| Forward voltage | VF | 1 | 1.5 | V | IF = 1.0 mA | 2 | |
| Reverse current | IR | 0.1 | 100 | μA | VR = 6 V | 2 | |
| Input capacitance | CO | 25 | pF | VR = 0 V, f = 1.0 MHz | 2 | ||
| Collector emitter breakdown voltage | BVCEO | 30 | V | IC = 100 μA | 2 | ||
| Emitter collector breakdown voltage | BVECO | 5 | V | IE = 100 μA | 2 | ||
| Collector base breakdown voltage | BVCBO | 70 | V | IC = 10 μA | 2 | ||
| Collector emitter capacitance | CCE | 3.4 | pF | VCE = 10 V | 2 | ||
| Saturation voltage, collector emitter | VCEsat | 1 | V | ICE = 0.5 mA | 2 | ||
| Capacitance (input to output) | CIO | 0.5 | pF | 2 | |||
| Resistance (input to output) | RIO | 100 | GΩ | 2 | |||
| Current transfer ratio (IC/IF) | CTRDC | 500 | % | IF = 1.0 mA, VCE = 5.0 V | 3 | ||
| Comparative tracking index | CTI | 175 | 399 | 3 | |||
| Creepage distance | 4 | mm | 3 | ||||
| Clearance distance | 4 | mm | 3 | ||||
| Insulation thickness | 0.2 | mm | 3 |
CAD (KiCad official)
- Symbol:
IL223AT - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
il223at-etched.step/il223at-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);il223at.step/il223at.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
f48ab1f53c75cea8, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).