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IL205AT

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · SOIC-8

IL205AT from Vishay Intertech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive LED anode of the gallium arsenide infrared emitter; forward continuous current is rated at 60 mA maximum (absolute maximum ratings).
2 K passive LED cathode of the gallium arsenide infrared emitter; peak reverse voltage is rated at 6 V (absolute maximum ratings).
3 NC unconnected No internal connection.
4 NC unconnected No internal connection.
5 E passive Emitter of the silicon NPN phototransistor; emitter-collector breakdown voltage BVECO is rated at 7 V minimum.
6 C passive Collector of the silicon NPN phototransistor; collector-emitter breakdown voltage BVCEO is rated at 70 V and DC collector current ICMAX at 50 mA.
7 B passive Base connection of the silicon NPN phototransistor, brought out for external base access; the datasheet gives no separate limit for this pin.
8 NC unconnected No internal connection.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOIC-8
Category Optoisolators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak reverse voltage VR 6 V 2
Forward continuous current IF 60 mA 2
Power dissipation (input) Pdiss 90 mW 2
Collector emitter breakdown voltage BVCEO 70 V 2
Emitter collector breakdown voltage BVECO 7 V 2
Collector-base breakdown voltage BVCBO 70 V 2
Collector current DC ICMAX 50 mA DC 2
Collector current pulsed ICMAX 100 mA t < 1 ms 2
Power dissipation (output) Pdiss 150 mW 2
Isolation test voltage VISO 4000 VRMS 2
Total package dissipation (LED and detector) Ptot 240 mW 2
Operating temperature Tamb -55 100 °C 2
Storage temperature Tstg -55 150 °C 2
Soldering time 10 s at 260 °C 2
Forward voltage VF 1.3 1.5 V IF = 10 mA 2
Reverse current IR 0.1 100 µA VR = 6 V 2
Capacitance CO 13 pF VR = 0 V 2
Collector emitter breakdown voltage BVCEO 70 V IC = 100 µA 2
Emitter collector breakdown voltage BVECO 7 10 V IE = 100 µA 2
Collector emitter leakage current ICEO 5 50 nA VCE = 10 V 2
Saturation voltage, collector emitter VCEsat 0.4 V IC = 2 mA, IF = 10 mA 2
Capacitance, input to output CIO 0.5 pF 2
Resistance, input to output RIO 100 GΩ 2
Current transfer ratio (IL205AT) CTR 40 80 % IF = 10 mA, VCE = 5 V 3
Current transfer ratio (IL205AT) CTR 13 25 % IF = 1 mA, VCE = 5 V 3
Switching time (ton, toff) ton, toff 3 µs IC = 2 mA, RL = 100 Ω, VCC = 10 V 3

CAD (KiCad official)

  • Symbol: IL205AT
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: il205at-etched.step / il205at-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); il205at.step / il205at.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 d7dac7c4fec6f3e5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF